CY7C1041BNV33 256 K × 16 Static RAM 256 K × 16 Static RAM Features Functional Description ■ High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW (max.) ■ Low CMOS standby power ❐ 1.8 mW (max.) ■ 2.0 V Data Retention (660 W at 2.0 V retention) Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE and OE features Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041BNV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout. Logic Block Diagram 256K x 16 ARRAY 1024 x 4096 SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER INPUT BUFFER I/O0 – I/O7 I/O8 – I/O15 A9 A10 A 11 A 12 A 13 A14 A15 A16 A17 COLUMN DECODER Cypress Semiconductor Corporation Document #: 001-06434 Rev. *C • 198 Champion Court BHE WE CE OE BLE • San Jose, CA 95134-1709 • 408-943-2600 Revised March 30, 2011 [+] Feedback CY7C1041BNV33 Contents Pin Configuration ............................................................. 3 Selection Guide ................................................................ 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 4 AC Test Loads and Waveforms ....................................... 4 Switching Characteristics ................................................ 5 Data Retention Characteristics ....................................... 6 Data Retention Waveform ................................................ 6 Switching Waveforms ...................................................... 7 Read Cycle No. 1 ........................................................ 7 Read Cycle No. 2 (OE Controlled) .............................. 7 Write Cycle No. 1 (CE Controlled) ............................... 8 Write Cycle No. 2 (BLE or BHE Controlled) ................ 8 Document #: 001-06434 Rev. *C Truth Table ........................................................................ 9 Write Cycle No. 3 (WE Controlled, OE LOW) ............. 9 Ordering Information ...................................................... 10 Ordering Code Definitions ......................................... 10 Package Diagrams .......................................................... 11 Acronyms ........................................................................ 12 Document Conventions ................................................. 12 Units of Measure ....................................................... 12 Document History Page ................................................. 13 Sales, Solutions, and Legal Information ...................... 14 Worldwide Sales and Design Support ....................... 14 Products .................................................................... 14 PSoC Solutions ......................................................... 14 Page 2 of 14 [+] Feedback CY7C1041BNV33 Pin Configuration SOJ TSOP II Top View A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10 Selection Guide -12 Maximum Access Time (ns) 12 Maximum Operating Current (mA) Commercial 190 Maximum CMOS Standby Current (mA) Commercial 0.5 Document #: 001-06434 Rev. *C Page 3 of 14 [+] Feedback CY7C1041BNV33 Maximum Ratings DC Voltage Applied to Outputs in High Z State[1] .................................. –0.5 V to VCC + 0.5 V Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. DC Input Voltage[1] .............................. –0.5 V to VCC + 0.5 V Current into Outputs (LOW)......................................... 20 mA Storage Temperature ................................ –65 °C to +150 °C Operating Range Ambient Temperature with Power Applied .......................................... –55 °C to +125 °C Supply Voltage on VCC to Relative GND[1] ...–0.5 V to +4.6 V Range Ambient Temperature[2] VCC Commercial 0 °C to +70 °C 3.3 V ± 0.3 V Electrical Characteristics Over the Operating Range Parameter Description -12 Test Conditions VOH Output HIGH Voltage VCC = Min, IOH = –4.0 mA VOL Output LOW Voltage VCC = Min, IOL = 8.0 mA VIH Input HIGH Voltage Voltage[1] Unit Min Max 2.4 – V – 0.4 V 2.2 VCC + 0.5 V VIL Input LOW –0.5 0.8 V IIX Input Leakage Current GND < VI < VCC –1 +1 mA IOZ Output Leakage Current GND < VOUT < VCC, Output Disabled –1 +1 mA ICC VCC Operating Supply Current VCC = Max., f = fMAX = 1/tRC – 190 mA ISB1 Automatic CE Power-Down Current Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX —TTL Inputs – 40 mA ISB2 Automatic CE Power-Down Current Max. VCC, CE > VCC – 0.3V, Commercial —CMOS Inputs VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 – 0.5 mA Commercial Capacitance[3] Parameter Description CIN Input Capacitance COUT I/O Capacitance Test Conditions Max Unit 8 pF 8 pF TA = 25 °C, f = 1 MHz, VCC = 3.3 V AC Test Loads and Waveforms R1 317 3.3 V THÉVENIN EQUIVALENT OUTPUT OUTPUT R2 351 30 pF INCLUDING JIG AND SCOPE 167 (b) 3.3 V 1.73 V GND Rise time: 1 V/ns (a) ALL INPUT PULSES 90% 10% 90% 10% Fall time: 1 V/ns Notes 1. VIL (min.) = –2.0 V for pulse durations of less than 20 ns. 2. TA is the “Instant On” case temperature. 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-06434 Rev. *C Page 4 of 14 [+] Feedback CY7C1041BNV33 Switching Characteristics[4] Over the Operating Range Parameter Description -12 Min Max Unit READ CYCLE tRC Read Cycle Time 12 – ns tAA Address to Data Valid – 12 ns tOHA Data Hold from Address Change 3 – ns tACE CE LOW to Data Valid – 12 ns tDOE OE LOW to Data Valid – 6 ns tLZOE OE LOW to Low Z 0 – ns – 6 ns tHZOE OE HIGH to High Z[5, 6] Z[6] tLZCE CE LOW to Low 3 – ns tHZCE CE HIGH to High Z[5, 6] – 6 ns tPU CE LOW to Power-Up 0 – ns tPD CE HIGH to Power-Down – 12 ns tDBE Byte Enable to Data Valid – 6 ns tLZBE Byte Enable to Low Z 0 – ns Byte Disable to High Z – 6 ns tHZBE WRITE CYCLE[7, 8] tWC Write Cycle Time 12 – ns tSCE CE LOW to Write End 10 – ns tAW Address Set-Up to Write End 10 – ns tHA Address Hold from Write End 0 – ns tSA Address Set-Up to Write Start 0 – ns tPWE WE Pulse Width 10 – ns tSD Data Set-Up to Write End 7 – ns tHD Data Hold from Write End 0 – ns [6] tLZWE WE HIGH to Low Z 3 – ns tHZWE WE LOW to High Z[5, 6] – 6 ns tBW Byte Enable to End of Write 10 – ns Notes 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms on page 4. Transition is measured ±500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-06434 Rev. *C Page 5 of 14 [+] Feedback CY7C1041BNV33 Data Retention Characteristics Over the Operating Range Parameter Description VDR VCC for Data Retention ICCDR Data Retention Current tCDR[10] Chip Deselect to Data Retention Time tR[11] Operation Recovery Time Conditions[9] VCC = VDR = 2.0 V, CE > VCC – 0.3 V, VIN > VCC – 0.3 V or VIN < 0.3 V Min Max Unit 2.0 – V – 330 A 0 – ns tRC – ns Data Retention Waveform DATA RETENTION MODE VCC 3.0 V VDR > 2 V tCDR 3.0 V tR CE Notes 9. No input may exceed VCC + 0.5V. 10. Tested initially and after any design or process changes that may affect these parameters. 11. tr < 3 ns for the -12 and -15 speeds. Document #: 001-06434 Rev. *C Page 6 of 14 [+] Feedback CY7C1041BNV33 Switching Waveforms Read Cycle No. 1[12, 13] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[13, 14] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE DATA VALID HIGH IMPEDANCE tPD tPU 50% 50% ICC ISB Notes 12. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 13. WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 001-06434 Rev. *C Page 7 of 14 [+] Feedback CY7C1041BNV33 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[15, 16] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATAI/O Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATAI/O Notes 15. Data I/O is high-impedance if OE or BHE and/or BLE= VIH. 16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high–impedance state. Document #: 001-06434 Rev. *C Page 8 of 14 [+] Feedback CY7C1041BNV33 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE WE BLE BHE I/O0–I/O7 I/O8–I/O15 Mode Power H X X X X High Z High Z Power Down Standby (ISB) L L H L L Data Out Data Out Read All Bits Active (ICC) L L H L H Data Out High Z Read Lower Bits Only Active (ICC) L L H H L High Z Data Out Read Upper Bits Only Active (ICC) L X L L L Data In Data In Write All Bits Active (ICC) L X L L H Data In High Z Write Lower Bits Only Active (ICC) L X L H L High Z Data In Write Upper Bits Only Active (ICC) L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) Document #: 001-06434 Rev. *C Page 9 of 14 [+] Feedback CY7C1041BNV33 Ordering Information Speed (ns) Ordering Code Package Diagram 12 CY7C1041BNV33L-12VXC 51-85082 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1041BNV33L-12ZXC 51-85087 44-pin TSOP II (Pb-free) Package Type Operating Range Commercial Ordering Code Definitions CY 7 C 1 04 1 BN V33 L - 12 XX C Temperature Range: C = Commercial Package Type: XX = VX or ZX VX = 44-pin Molded SOJ (Pb-free) ZX = 44-pin TSOP II (Pb-free) Speed: 12 ns L = Low Power V33 = Voltage range (3 V to 3.6 V) BN = 0.25 µm Technology 1 = Data width × 16-bits 04 = 4-Mbit density 1 = Fast Asynchronous SRAM family Technology Code: C = CMOS 7 = SRAM CY = Cypress Please contact local sales representative regarding availability of these parts. Document #: 001-06434 Rev. *C Page 10 of 14 [+] Feedback CY7C1041BNV33 Package Diagrams Figure 1. 44-Lead (400-Mil) Molded SOJ (51-85082) 51-85082 *C Figure 2. 44-Pin TSOP II (51-85087) 51-85087 *C Document #: 001-06434 Rev. *C Page 11 of 14 [+] Feedback CY7C1041BNV33 Acronyms Document Conventions Description Units of Measure CMOS Complementary metal oxide semiconductor Symbol CE Chip Enable °C degree Celsius I/O Input/output A micro Amperes OE Output Enable mA milli Amperes SRAM Static Random Access Memory F micro Farad SOJ Small Outline J-lead s micro seconds TTL transistor-transistor logic ms milli seconds TSOP thin small-outline package ns nano seconds WE Write Enable pF pico Farad V Volts ohms W micro Watts mW milli Watts W Watts % percent Acronym Document #: 001-06434 Rev. *C Unit of Measure Page 12 of 14 [+] Feedback CY7C1041BNV33 Document History Page Document Title: CY7C1041BNV33 256 K × 16 Static RAM Document Number: 001-06434 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 423877 See ECN NXR New Data Sheet *A 2899016 See ECN VKN Removed Industrial grade Removed 15ns speed Updated Ordering Information table Updated Package Diagrams *B 3109184 12/13/2010 AJU Added Ordering Code Definitions. *C 3210222 03/30/2011 PRAS Document #: 001-06434 Rev. *C Updated Selection Guide. Added Acronyms and Units of Measure. Updated in new template. Page 13 of 14 [+] Feedback CY7C1041BNV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2006-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. 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Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-06434 Rev. *C Revised March 30, 2011 Page 14 of 14 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback