MA-COM TVB200SB-L

SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Circuit Protection's SiBar thyristor surge protection
devices
are
designed
to
help
protect
sensitive
telecommunication equipment from the hazards caused
by lightning, power contact, and power induction. These
devices have a high electrical surge capability to help
protect against transient faults and a high off-state
impedance, rendering them virtually transparent during
normal system operation.
SiBar thyristor surge protectors are designed to assist
telecommunication and computer telephony equipment
in meeting the applicable requirements and industry
specifications.
Benefits:
Features:
• RoHS compliant
• Helps provide protection for sensitive telecom
electronic equipment
• Low leakage current
• Bidirectional crowbar transient voltage protection
• Broad voltage range 200V – 300V
• High off-state impedance
• Low power dissipation
• Low on-state voltage
• Fast, reliable operation
• High surge capability
• No wear-out mechanisms
• Short-circuit failure mode
• Helps designers meet worldwide telecom standards
• Helps reduce warranty and service costs
• Easy installation
• Surface-mount technology
• DO-214AA SMB package
• 10 x 1000 μs 75A and 80A surge rating
• Helps improve power efficiency of equipment
• Helps equipment comply with TIA-968,
Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45
Applications:
• Modems
• Set top boxes
• Fax machines
• POS systems
• Phones, answering machines • Analog and digital linecards (xDSL , T1/E1...)
• PBX systems
• Other customer premise and central office network equipment requiring protection
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
Status: Released
1
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB1 - Electrical Characteristics
Part Number
VDM Max.
(V)
VBO Max.
(V)
IH Min.
(mA)
VT Max.
(V)
C1 (Typ)
@50VDC Bias
(pF)
C2 (Typ)
@2VDC Bias
(pF)
TVB200SB-L
200
320
150
4
30
49
Off-State
Current
@VDM
(μA)
5
TVB270SB-L
275
350
150
4
25
50
5
TVB300SB-L
300
400
150
4
21
42
5
Notes: All electrical characteristics are measured at 25°C.
VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
VBO measured at 100V/µs.
Table SB2 – Surge Current Rating
TIA-968
Type A
Part Number
TVBxxxSB-L
Ipp(A)
5 x 320 µs
Telcordia GR-1089*
IEC61000-4-5
Ipp (A)
Ipp (A)
10 x 1000 µs 2 x 10 µs
Ipp (A)
8 x 20 µs
ITU K.20/21/45*
Type B
Ipp(A)
pp (A)
10 x 560 µs 10 x 160 µs
100
100
150
80
250
250
ITSM
IPP (A)
di/dt dV/dt
5 x 310 μs
Min.
(A/µs) (V/µs)
(VOC: 10 x 700μs) (A)
100
30 500 2000
Notes: *Lightning current wave forms for applicable industry specification.
ITSM, peak on-state surge current is measured at 60 Hz, one cycle.
di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF).
dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C)
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
Status: Released
2
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB3 – Dimensions in Millimeters
A
Dimension
TVBxxxSB-L
B
TVBxxxSB-L
D*
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
4.06
4.57
3.30
3.94
1.90
2.41
1.95
2.20
(0.160)
(0.180)
(0.130)
(0.155)
(0.075)
(0.095)
(0.077)
(0.087)
H
Dimension
C
J
K
P
S
Min.
0.051
Max.
0.200
Min.
0.150
Max.
0.31
Min.
0.76
Max.
1.27
Ref.
0.51
Min.
5.21
Max.
5.59
(0.002)
(0.008)
(0.006)
(0.012)
(0.030)
(0.050)
(0.020)
(0.205)
(0.220)
Notes: *D dimension is measured within dimension P.
TVB series devices use industry standard SMB package type.
All devices are bidirectional and may be oriented in either direction for installation
Table SB4 – Physical Characteristics and Environmental Specifications
Lead material
Matte tin finish (-L devices)
Encapsulating material
Epoxy, meets UL94V-0 requirements
Solderability
per MIL-STD-750, Method 2026
Solder heat withstand
per MIL-STD-750, Method 2031
Solvent resistance
per MIL-STD-750, Method 1022
Mechanical shock
per MIL-STD-750, Method 2016
Vibration
per MIL-STD-750, Method 2056
Storage temperature (°C)
-55 to 150
Operating temperature (°C)
-40 to 125
Junction temperature (°C)
150
Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260
Table SB5 – Reliability Tests
Test
High temperature, reverse bias
Conditions
+100°C, 50VDC bias
Duration
1000 hours
High humidity, high temperature, reverse bias
85% RH, +85°C, 50VDC bias
1000 hours
High temperature storage life
+150°C
1000 hours
Temperature cycling
-65°C to +150°C, 15 minute dwell
1000 cycles
Autoclave
100% RH, +121°C, 15 PSI
96 hours
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
Status: Released
3
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
Status: Released
4
Rev: C
Date: APRIL 2, 2009
SiBar Thyristor Surge Protectors
TVBxxxSB-L Series
Table SB6 – Packaging and Marking Information
Recommended Pad Layout (millimeters/inchs)
Part
Description
TVB200SB-L
Tape and
Reel
Quantity
2,500
Standard
Package
10,000
Part
Marking
200B
Dimension
A (Nom.)
2.261 (0.089)
Dimension
B (Nom.)
2.159(0.085)
Dimension
C (Nom.)
2.743(0.108)
Agency
Recognition*
UL
TVB270SB-L
2,500
10,000
270B
2.261 (0.089)
2.159(0.085)
2.743(0.108)
UL
TVB300SB-L
2,500
10,000
300B
2.261 (0.089)
2.159(0.085)
2.743(0.108)
UL
*UL497B, File # E179610
308 Constitution Drive, MS R21/2A
Menlo Park, CA USA 94025-1164
Tel (800) 227-7040
(650) 361-6900
Fax (650) 361-2508
www.circuitproection.com
www.circuitprotection.com.hk (Chinese)
www.circuitprotection.jp (Japanese)
Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks.
All other trademarks and copyrights are property of their respective owners.
Document: SCD 27171
SiBar Thyristor Surge Protectors
© 2007, 2009 Tyco Electronics Corporation. All rights Reserved.
Status: Released
5
Rev: C
Date: APRIL 2, 2009