MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317 Description and Applications M/A-COM's MA4E1317 single, MA4E1318 antiparallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input. MA4E1318 MA4E1319-1 MA4E1319-2 MA4E2160 1 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Electrical Specifications @ + 25 °C Parameters and Test Conditions Symbol MA4E1317 Units Min. Junction Capacitance at 0V at 1 MHz Cj pF Total Capacitance at 0V at 1 MHz1 Ct pF DCj pF Rs Ohms Forward Voltage at +1mA Vf1 Volts Forward Voltage Difference at 1mA DVf Volts Reverse Breakdown Voltage at -10uA Vbr Volts SSB Noise Figure NF dB Symbol Units Junction Capacitance Difference Series Resistance at +10mA 2 Parameters and Test Conditions Cj pF Total Capacitance at 0V at 1 MHz1 Ct pF Junction Capacitance Difference DCj Series Resistance at +10mA2 Max. .030 .60 4.5 .045 .060 4 7 .70 .80 Typ. .020 .0603 .005 .010 4 7 .70 .80 .005 .010 MA4E2160 Max. Min. 3 Typ. .020 .005 Rs Ohms Forward Voltage at +1mA Vf1 Volts Forward Voltage Difference at 1mA DVf Volts Reverse Breakdown Voltage at -10uA Vbr Volts 4.5 .0453 6.54 pF dB .60 MA4E1319-1 or -2 .60 Max. 7 .0603 NF .0303 6.54 .0303 Typ. .0203 .0453 SSB Noise Figure Min. .020 Min. Junction Capacitance at 0V at 1 MHz Typ. MA4E1318 .0453 .0603 .010 .005 .010 4 7 4 7 .70 .80 .70 .80 .005 .010 .005 .010 7 6.5 .0303 Max. 3 .60 4.5 4 7 6.54 Notes: 1. 2. 3. 4. 2 Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBM for a single Schottky junction. The IF noise figure contribution (1.5 dB) is included. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Forward Current vs Temperature Forward Current (mA) 100.00 +125°C 25°C 10.00 - 50°C 1.00 0.10 0.01 0.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 Forward Voltage (V) Absolute Maximum Ratings 1 Parameter Absolute Maximum Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Incident LO Power +20 dBm Incident RF Power +20 dBm . Mounting Temperature +235°C for 10 seconds Electrostatic Discharge ( ESD ) Classification 2 Class 0 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Human Body Model 3 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Mounting Techniques These chips were designed to be inserted onto hard or soft substrates with the junction side down. They can be mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. Solder Die Attach: Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not recommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than 200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment. Epoxy Die Attach: Assembly can be preheated to 125 - 150°C. Use a minimum amount of epoxy. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures should be kept below 200°C. Handling Procedures The following precautions should be observed to avoid damaging these chips: Cleanliness: The chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling: The protective polymer coating on the active areas of these die provides scratch protection, particularly for the metal air bridge which contacts the anode. Die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. GaAs Flip Chip Ordering Information 4 Part Number Package Standard Quantity per Carrier MA4E1317 Die in Carrier 100 MADS-001317-1278HP Pocket Tape on Reel 3000 MA4E1318 Wafer on Frame 100 MADS-001318-1197HP Pocket Tape on Reel 3000 MA4E1319-1 Die in Carrier 100 MA4E1319-2 Die in Carrier 100 MA4E2160 Die in Carrier 100 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Flip Chip Outline Drawings B F E A C MA4E1317 Case Style 1278 G D DIM. H A B C D E F G H G SQ TYP F INCHES MIN. MAX. 0.013 0.026 0.008 0.007 0.016 0.004 0.006 0.0075 0.014 0.027 0.009 0.008 0.017 0.006 0.007 0.0085 MILLIMETERS MIN. MAX. 0.330 0.660 0.203 0.177 0.406 0.101 0.152 0.190 0.335 0.685 0.228 0.203 0.430 0.152 0.177 0.216 TYP E TYP B MA4E1318 Case Style 1197 D TYP A DIM. C A B C D E F G INCHES MIN. MAX. .025 .012 .006 .018 .0075 .003 .004 .027 .015 .008 .020 .0085 .005 .006 MILLIMETERS MIN. MAX. .64 .32 .15 .45 .190 .08 .10 .69 .37 .20 .50 .216 .13 .15 ALIGNMENT INDICATOR (2 PLCS) 5 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Flip Chip Outline Drawings F TYP G SQ. TYP E TYP MA4E1319-1 Case Style 1199 B D A C DIM. A B C D E F G INCHES MIN. MAX. .027 .018 .0075 .013 .003 .003 .004 .029 .020 .0085 .015 .005 .005 .006 MILLIMETERS MIN. MAX. .68 .45 .190 .33 .08 .08 .10 .73 .50 .216 .38 .13 .13 .15 ALIGNMENT INDICATOR (3 PLCS) 6 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Flip Chip Outline Drawings 7 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.