NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-251 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation(Tc=25℃)……………………………20W VCBO ——Collector-Base Voltage………………………………100V 1―Base,B 2―Collector,C 3―Emitter,E VCEO ——Collector-Emitter Voltage……………………………100V VE B O —— Emitter - Base Voltage………………………………5 V IC——Collector Current(DC)………………………………………5A ICP ——Collector Current(Pulse)……………………………………8A Ib——Base Current………………………………………………120mA █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 100 V IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 100 V IC=5mA, IB=0 HFE(1) DC Current Gain 1000 VCE=3V, IC=0.5A HFE(2) 1000 VCE=3V, IC=3A VCE(sat1) Collector- Emitter Saturation Voltage 2.0 V IC=3A, IB =12mA VCE(sat2) Collector- Emitter Saturation Voltage 4.0 V IC=3A, IB =20mA VBE(ON) Base-Emitter On Voltage 2.5 V VCE=3V, IC=3A ICEO Collector Cut-off Current 0.5 ICBO Collector Cut-off Current 0.2 mA VCB=50V, IB=0 mA VCB=100V, IE=0 IEBO Emitter Cut-off Current Cob Output Capacitance 2.0 200 mA VEB=5V, IC=0 pF VCB=10V, IE=0,f=0.1MHz NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U