HUASHAN HP122U

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP122U
█ APPLICATIONS
NPN Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-251
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)……………………………20W
VCBO ——Collector-Base Voltage………………………………100V
1―Base,B
2―Collector,C
3―Emitter,E
VCEO ——Collector-Emitter Voltage……………………………100V
VE B O —— Emitter - Base Voltage………………………………5 V
IC——Collector Current(DC)………………………………………5A
ICP ——Collector Current(Pulse)……………………………………8A
Ib——Base Current………………………………………………120mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO
Collector-Base Breakdown Voltage
100 V IC=1mA,
IE=0
BVCEO
Collector-Emitter Breakdown Voltage
100 V IC=5mA,
IB=0 HFE(1) DC Current Gain 1000 VCE=3V, IC=0.5A HFE(2)
1000 VCE=3V, IC=3A
VCE(sat1) Collector- Emitter Saturation Voltage 2.0 V IC=3A, IB =12mA VCE(sat2) Collector- Emitter Saturation Voltage 4.0 V IC=3A, IB =20mA VBE(ON)
Base-Emitter On Voltage
2.5 V VCE=3V, IC=3A
ICEO
Collector Cut-off Current
0.5 ICBO
Collector Cut-off Current
0.2 mA VCB=50V, IB=0
mA VCB=100V, IE=0
IEBO
Emitter Cut-off Current
Cob
Output Capacitance
2.0 200 mA VEB=5V, IC=0
pF VCB=10V, IE=0,f=0.1MHz
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP122U