P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3279 █ STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………30V VCEO——Collector-Emitter Voltage……………………………10V V EB O ——Emitter-Base Voltage………………………………6V I C ——Collector Current……………………………………2A ICP——Collector Current（Pulse）…………………………………5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 30 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 10 V IC=10mA, BVEBO Emitter-Base Breakdown Voltage 6 V IE=1mA，IC=0 HFE(1) DC Current Gain 140 VBE ICBO ICEO IEBO fT Cob VCE=-1V, IC=-500mA 70 HFE(2) VCE(sat) 600 IB=0 VCE=1V, IC=2A Collector- Emitter Saturation Voltage 0.5 V IC=2A, IB=50mA Base-Emitter Voltage 1.5 100 100 100 V nA nA nA MHz pF VCE=1V, IC=2A VCB=30V, IE=0 VCE=10V, IB=0 VEB=6V, IC=0 VCE=1V, IC=0.5A Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current 150 27 Current Gain-Bandwidth Product Output Capacitance █ hFE Classification Y GR BL 140—280 200—400 300—600 VCB=10V, IE=0，f=1MHz Shantou Huashan Electronic Devices Co.,Ltd. H3279