PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127 █ APPLICATIONS PNP Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………65W PC——Collector Dissipation（Ta=25℃）……………………………2W 1―Base，B 2―Collector，C 3―Emitter，E VCBO——Collector-Base Voltage………………………………-100V VCEO——Collector-Emitter Voltage……………………………-100V V E B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current（DC）………………………………………-5A IC——Collector Current（Pulse）……………………………………-8A Ib——Base Current……………………………………………-120mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO HFE Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage *DC Current Gain Min Typ Max Unit Test Conditions -100 V IC=-1mA, IE=0 -100 V IC=-5mA, IB=0 VCE=-3V, IC=-0.5A 1000 VCE(sat1) *Collector- Emitter Saturation Voltage -2.0 V IC=-3A, IB=-12mA VCE(sat2) *Collector- Emitter Saturation Voltage -4.0 V IC=-3A, IB=-20mA VBE(ON) *Base-Emitter On Voltage -2.5 V VCE=-3V, IC=-3A -0.5 mA VCB=-50V, IB=0 ICEO Collector Cut-off Current ICBO Collector Cut-off Current -0.2 mA VCB=-100V, IE=0 IEBO Emitter Cut-off Current -2.0 mA VEB=-5V, IC=0 Cob Output Capacitance 300 pF VCB=-10V, IE=0，f=0.1MHz *Pulse Test：PW≤300μs，Duty cycle≤2% PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP127