IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 250 V RDS(on) (Ω) VGS = 10 V 0.240 Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single D2PAK (TO-263) Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT D DESCRIPTION G Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G D S I2PAK (TO-262) TO-220 S N-Channel MOSFET S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRF644NPbF IRF644NSPbF IRF644NSTRLPbFa IRF644NSTRRPbFa IRF644NLPbF SiHF644N-E3 SiHF644NS-E3 SiHF644NSTL-E3a SiHF644NSTR-E3a SiHF644NL-E3 IRF644N IRF644NS IRF644NSTRLa IRF644NSTRRa IRF644NL SiHF644N SiHF644NS SiHF644NSTLa SiHF644NSTRa SiHF644NL TO-220 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT VGS ± 20 V Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID 14 9.9 A IDM 56 1.0 W/°C Single Pulse Avalanche Energyb EAS 180e mJ Avalanche Current IAR 8.4 A Repetitive Avalanche Energy EAR 15 mJ PD 150 W dV/dt 7.9 V/ns Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL LIMIT TJ, Tstg - 55 to + 175 °C 300d for 10 s Mounting Torque UNIT 6-32 or M3 screw 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω IAS = 8.4 A (see fig. 12). c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. This is a calculated value limited to TJ = 175 °C. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambientc RthJA - 62 Case-to-Sink, Flat, Greased Surfacec RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 Maximum Junction-to-Ambient (PCB Mount)d RthJA - 40 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.240 Ω 8.8 - - S VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 8.4 Ab VGS = 10 V VDS = 50 V, ID = 8.4 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1060 - - 140 - - 38 - - - 54 Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 9.2 Gate-Drain Charge Qgd - - 26 Turn-On Delay Time td(on) - 10 - tr - 21 - - 30 - - 17 - - 4.5 - - 7.5 - Rise Time Turn-Off Delay Time Fall Time td(off) ID = 8.4 A, VDS = 200 V, see fig. 6 and 13b VDD = 125 V, ID = 8.4 A, RG = 6.2 Ω, VGS = 10 V, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS www.vishay.com 2 VGS = 10 V Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - - 14 - - 56 - - 1.3 - 165 250 ns - 1.0 1.6 µC Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current MOSFET symbol showing the integral reverse p - n junction diode IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton D A G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is only applied to TO-220 package. d. When mounted on 1" square PCB (fr-4 or G-10 material). TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 TOP VDS, Drain-to-Source Current (V) ID, Drain-to-Source Current (A) TOP 4.5V 1 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 1 20μs PULSE WIDTH Tj = 175°C 20μs PULSE WIDTH Tj = 25°C 0.1 0.1 0.1 1 10 100 0.1 1 100 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 3 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd TJ = 175°C C, Capacitance (pF) ID, Drain-to-Source Current (A) 100 TJ = 25°C 10 Coss 100 Crss VDS = 50V 20μs PULSE WIDTH 1 6 4 8 10 11 13 10 Fig. 3 - Typical Transfer Characteristics 18 ID = 14A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 10 100 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 3.5 1 15 VGS, Gate-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) Ciss 1000 ID = 8.4A VDS = 200V VDS = 125V VDS = 50V 16 12 8 4 0 0 12 24 36 48 60 OG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 15 12 ID, Drain Current (A) ISD, Reverse Drain Current (A) 100 TJ = 175°C 10 TJ = 25°C 1 9 6 3 0.1 VGS = 0V 0.0 0.4 0.8 1.1 0 1.5 25 50 75 100 125 150 175 TC = Case Temperature (°C) VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature VDS RD 1000 ID, Drain-to-Source Current (A) VGS OPERATION THIS AREA LIMITED BY R DS (on) 100 D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 100μsec 1msec 1 Fig. 10a - Switching Time Test Circuit VDS 90 % Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10msec 10 100 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 1000 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 5 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Thermal Response (ZthJC) 10 1 D= 0.50 0.20 PDM 0.10 0.1 t1 0.05 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 t2 Notes: 1. Duty factor D= t1 / t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp Driver L VDS D.U.T RG + A - VDD IAS 20 V tp IAS 0.01 Ω Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 300 ID 3.4A 5.9A BOTTOM 8.4A TOP 240 180 120 60 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG VGS 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - + RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91038. Document Number: 91038 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1