R LL5712 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES MiniMELF Metal-on-silicon junction High breakdown voltage Low turn-on voltage JF Ultrafast switching speed 0.063(1.6) 0.055(1.4) Primarily intended for high level UHF/VHF detection and pulse applications with broad dynamic range. The diode is also available in the DO-35 case with type designation 1N5712. 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF glass case(SOD-80) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) VRRM Peak Reverse Voltage Ptot IF TA/TSTG Power Dissipation (infinite Heat Sink) Forward Continuous Current Operation and storage temperature range Units Value Symbols 20 V 430 35 mW mA -55 to+150 C ELECTRICAL CHARACTERISTICS Symbols Reverse breakover voltage at IR=10mA Min. VR Typ. Max. Unis V 20 Leakage current at VR=15V IR 100 nA Forward voltage drop at IF=1mA Test pulse:tp 300ms d 2% IF=35mA VF VF 0.41 1.0 V V CJ 1.2 pF RqJA 400 K/W Junction Capacitance at VR=0V ,f=1MHz Thermal resistance 2-63 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM RATINGS AND CHARACTERISTICS CURVES LL5712 Figure 1. forward current versus forward voltage at different temperatures(typical values) Figure 2. forward current versus forward voltage (typical values) IF(mA) 10 IF(mA) 2 30 Tamb= 25 C 25 10 20 15 1 Tamb=150 C Tamb= 25 C Tamb= -55 C 10 10 -1 5 10 -2 0 0.2 0.4 0.6 0.8 1 0 1.2 VF(V) 0.2 0.4 0.6 0.8 1 VF(V) Figure 3.Reverse current versus ambient temperature IR(mA) 10 2 90% confidence VR=15V 10 max. typ. 1 10 -1 10 -2 10 -3 0 25 50 75 100 125 150 Tamb=( C) 2-64 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM RATINGS AND CHARACTERISTICS CURVES LL5712 Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) 10 2 150 C 10 125 C 100 C 1 75 C 10 -1 10 -2 10 -3 50 C 25 C 0 25 50 75 100 125 150 Figure 5.Capacitance CJ versus revers applied voltage VR (typical values) CJ(pF) 1.5 Tamb= 25 C 1.25 1 0.75 0.5 0.25 0 5 10 15 20 VR(V) 2-65 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM