LL29

R
LL29
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
MiniMELF
Metal-on-silicon junction
Low turn-on voltage
Ultrafast switching speed
Primarily intended for high level UHF detection and pulse applications with
broad dynamic range
0.063(1.6)
0.055(1.4)
The diode is also available in the DO-35 case with type designation BAT29.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
VRRM
Peak Reverse Voltage
Forward Continuous Current
Junction and Storage temperature range
IF
IFSM
TSTG
Junction temperature
TJ
Surge non repetitive Forward current tp 1S
Units
5
V
30
mA
A
2.0
-55 to+150
C
125
℃
ELECTRICAL CHARACTERISTICS
Min.
Symbols
Typ.
Max.
Unis
Reverse breakover voltage
at IR=100mA
VR
Leakage current at VR=1V
IR
50
nA
Forward voltage drop
at IF=10mA
Test pulse:tp 300ms d 2%
VF
0.55
V
Junction Capacitance at VR=0V ,f=1GHz
Thermal resistance
JINAN JINGHENG ELECTRONICS CO., LTD.
V
V
5
CJ
1.0
pF
RqJA
400
K/W
2-44
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL29
Figure 1. forward current versus forward voltage
(typical values)
Figure 2. Capacitance CJ versus reverse applied
voltage VR (typical values)
IF(mA)
10
CJ(pF)
2
1
Tamb= 25 C
0.8
10
0.6
1
0.4
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
10
-1
0.2
10
-2
0
0.2
0.4
0.6
0.8
0
1
2
6
4
8
VR(V)
10
VF(V)
Figure 3.Reverse current versus ambient
temperature
Figure 4.Reverse current versus continuous
Reverse voltage(typical values)
IR(mA)
IR(mA)
10
10
90% confidence
VR=1V
125 C
100 C
max.
typ.
1
1
75 C
10
-1
10
-2
10
-3
10
-1
10
-2
10
-3
50 C
25 C
0
25
50
75
100
125
0
1
2
3
84
5
VR(V)
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-45
HTTP://WWW.JINGHENGGROUP.COM