R LL42,LL43 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES MiniMELF For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type 0.063(1.6) 0.055(1.4) designation BAT42 to BAT43. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.142(3.6) 0.134(3.4) MECHANICAL DATA 0.019(0.48) 0.011(0.28) Case: MiniMELF glass case(SOD-80 ) Dimensions in inches and (millimeters) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Repetitive Peak Reverse Voltage Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp < 1s, d < 0.5, Surge forward current at tp < 10mS , Power Dissipation at TA=25 C TA=25 C TA=65 C Junction Temperature Ambient Operating temperature Range Storage Temperature Range Symbols Value VRRM IF IFRM IFSM Ptot TJ TA TSTG 30 200 500 4 200 Units V mA mA A mW 1) 1) 1) 1) 125 C C -65 to+125 -65 to+150 C 1) Valid provided thatelectrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS Reverse breakdown voltage Tested with 100mA Forward voltage Pulse Test tp < 300ms,d < 2% at IF=200mA, at IF=10mA, at IF=50mA, at IF=2mA, at IF=15mA LL42 LL42 LL43 LL43 Leakage current Pulse Test tp < 300ms,d < 2% at VR=25V at VR=25V, TJ=100℃ Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA Detection efficiency at RL=15kW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient Air Symbols Min. V(BR)R 30 VF VF VF VF VF Typ. 1 0.4 0.65 0.33 0.45 0.5 100 V V V V V mA mA pF 7 5 80 300 1) RqJA Unis V 0.26 IR IR CJ trr Max. ns % K/W 1) Valid provided that electrodes are kept at ambient temperature JINAN JINGHENG ELECTRONICS CO., LTD. 2-48 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL42/LL43 Figure 1. Forward current versus forward voltage at different temperatures(typical values) Figure 2. Forward current versus forward voltage (typical values) IF(mA) 10 IF(mA) 3 500 Tj= 25 C 10 2 400 300 10 Tamb=125 C Tamb= 25 C Tamb= -55 C 1 10 -1 10 -2 200 100 0 0.2 0.4 0.6 0.8 1 0 1.2 0.2 0.4 0.6 0.8 1 VF(V) VF(V) Figure 3.Reverse current versus ambient temperature(typical values) IR(mA) 10 3 90% confidence VR=25V 10 2 10 1 max. typ. 1 10 -1 10 -2 0 25 50 75 100 125 Tamb=( C) JINAN JINGHENG ELECTRONICS CO., LTD. 2-49 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL42/LL43 Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) 10 3 10 2 125 C 100 C 10 1 75 C 1 10 -1 10 -2 50 C 25 C 0 5 10 15 20 25 30 VR(V) Figure 5.Capacitance CJ versus reverse applied voltage VR (typical values) CJ(pF) 12 Tamb= 25 C 10 8 6 4 2 0 5 JINAN JINGHENG ELECTRONICS CO., LTD. 10 15 20 2-50 25 30 VR(V) HTTP://WWW.JINGHENGGROUP.COM