CY7C1020CV26 512Kb (32K x 16) Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14). • Temperature Range — Automotive: –40°C to 125°C • High speed — tAA = 15 ns • Optimized voltage range: 2.5V–2.7V • Automatic power-down when deselected • Independent control of upper and lower bits • CMOS for optimum speed/power • Package offered: 44-pin TSOP II Functional Description The CY7C1020CV26 is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1020CV26 is available in standard 44-pin TSOP Type II. Logic Block Diagram Pin Configuration TSOP II Top View SENSE AMPS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS 32K x 16 RAM Array NC A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A4 A14 A13 A12 NC I/O1–I/O8 I/O9–I/O16 COLUMN DECODER A8 A9 A10 A11 A12 A13 A14 BHE WE CE OE BLE 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC Selection Guide CY7C1020CV26-15 Unit Maximum Access Time 15 ns Maximum Operating Current 100 mA 5 mA Maximum CMOS Standby Current Cypress Semiconductor Corporation Document #: 38-05406 Rev. *A • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised April 18, 2005 CY7C1020CV26 DC Input Voltage[1] .................................. –0.5V to VCC+0.5V Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Operating Range Supply Voltage on VCC to Relative GND[1] .... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[1] ......................................–0.5V to VCC+0.5V Ambient Temperature VCC –40°C to +125°C 2.5V to 2.7V Range Automotive Electrical Characteristics Over the Operating Range CY7C1020CV26 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA VOL Output LOW Voltage VCC = Min., IOL = 1.0 mA VIH Input HIGH Voltage VIL Input LOW Voltage[1] IIX Input Load Current GND < VI < VCC IOZ Output Leakage Current GND < VI < VCC, Output Disabled IOS[2] Output Short Circuit Current ICC VCC Operating Supply Current ISB1 ISB2 Min. Max. Unit 2.3 V 0.4 V 2.0 VCC + 0.3 V –0.3 0.8 V –5 +5 µA –5 +5 µA VCC = Max., VOUT = GND –300 mA VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 100 mA Automatic CE Power-Down Current —TTL Inputs Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX 40 mA Automatic CE Power-down Current —CMOS Inputs Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 5 mA Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 2.6V Max. Unit 8 pF 8 pF Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05406 Rev. *A Page 2 of 8 CY7C1020CV26 AC Test Loads and Waveforms[4] ALL INPUT PULSES R 1830 Ω 2.5V 2.6V 90% OUTPUT R2 1976 Ω 30 pF GND 90% 10% 10% Fall Time:1 V/ns Rise Time: 1 V/ns (a) (b) AC Switching Characteristics Over the Operating Range CY7C1020CV26 Parameter Description Min. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid tDOE OE LOW to Data Valid tLZOE OE LOW to Low Z[5] tHZOE OE HIGH to High tLZCE CE LOW to Low 15 3 15 ns 7 ns ns 7 3 Z[5, 6] ns ns 0 Z[5, 6] Z[5] ns 15 ns ns tHZCE CE HIGH to High tPU[7] CE LOW to Power-up tPD[7] CE HIGH to Power-down 15 ns tDBE Byte Enable to Data Valid 7 ns tLZBE Byte Enable to Low Z tHZBE Byte Disable to High Z WRITE 7 0 ns ns 0 ns 7 ns CYCLE[8] tWC Write Cycle Time 15 ns tSCE CE LOW to Write End 10 ns tAW Address Set-Up to Write End 10 ns tHA Address Hold from Write End 0 ns tSA Address Set-Up to Write Start 0 ns tPWE WE Pulse Width 10 ns tSD Data Set-Up to Write End 8 ns tHD Data Hold from Write End 0 ns 3 ns WE HIGH to Low Z[5] tHZWE WE LOW to High Z[5, 6] tBW Byte Enable to End of Write tLZWE 4 10 ns ns Notes: 4. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of 1.3V, input pulse levels of 0 to 2.5V and transmission line loads as in (a) of AC Test Loads. 5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 6. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 7. This parameter is guaranteed by design and is not tested. 8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05406 Rev. *A Page 3 of 8 CY7C1020CV26 Switching Waveforms Read Cycle No. 1[9, 10] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[10, 11] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE HIGH IMPEDANCE DATA VALID tPD tPU 50% IICC CC 50% IISB SB Notes: 9. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. Document #: 38-05406 Rev. *A Page 4 of 8 CY7C1020CV26 Switching Waveforms Write Cycle No. 1 (CE Controlled)[12, 13] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O Notes: 12. Data I/O is high impedance if OE or BHE and BLE = VIH. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05406 Rev. *A Page 5 of 8 CY7C1020CV26 Switching Waveforms Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE WE BLE BHE H X X X X High Z High Z Power-down Standby (ISB) L L H L L Data Out Data Out Read – All bits Active (ICC) L H Data Out High Z Read – Lower bits only Active (ICC) H L High Z Data Out Read – Upper bits only Active (ICC) L L Data In Data In Write – All bits Active (ICC) L H Data In High Z Write – Lower bits only Active (ICC) H L High Z Data In Write – Upper bits only Active (ICC) L X L I/O1–I/O8 I/O9–I/O16 Mode Power L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) L X X H H High Z High Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 15 Ordering Code CY7C1020CV26-15ZSXE Document #: 38-05406 Rev. *A Package Name Z44 Package Type 44-Lead TSOP Type II (Pb-Free) Operating Range Automotive Page 6 of 8 CY7C1020CV26 Package Diagrams 44-Pin TSOP II Z44 51-85087-*A All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05406 Rev. *A Page 7 of 8 © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1020CV26 Document History Page Document Title: CY7C1020CV26 512Kb (32K x 16) Static RAM Document Number: 38-05406 REV. ECN NO. Issue Date Orig. of Change ** 128060 07/30/03 EJH Customized data sheet to meet special requirements for CG5988AF Automotive temperature range: –40°C / +125°C *A 352999 See ECN SYT Removed ‘CG5988AF’ from the Datasheet Edited the features section for better structure on Page 1 Edited the title to include the mention of ‘512Kb’ Document #: 38-05406 Rev. *A Description of Change Page 8 of 8