ETC CY7C1062AV25

CY7C1062AV25
PRELIMINARY
512K x 32 Static RAM
Features
the address pins (A0 through A18). If Byte Enable B (BB) is
LOW, then data from I/O pins (I/O8 through I/O15) is written
into the location specified on the address pins (A0 through
A18). Likewise, BC and BD correspond with the I/O pins I/O16
to I/O23 and I/O24 to I/O31, respectively.
• High speed
— tAA = 8, 10, 12 ns
• Low active power
— 1080 mW (max.)
• Operating voltages of 2.5 ± 0.2V
• 1.5V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and CE3
features
Reading from the device is accomplished by enabling the chip
(CE1, CE2, and CE3 LOW) while forcing the Output Enable
(OE) LOW and Write Enable (WE) HIGH. If the first Byte
Enable (BA) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
Enable B (BB) is LOW, then data from memory will appear on
I/O8 to I/O15. Similarly, Bc and BD correspond to the third and
fourth bytes. See the truth table at the back of this data sheet
for a complete description of read and write modes.
Functional Description
The input/output pins (I/O0 through I/O31) are placed in a
high-impedance state when the device is deselected (CE1,
CE2or CE3 HIGH), the outputs are disabled (OE HIGH), the
byte selects are disabled (BA-D HIGH), or during a write
operation (CE1, CE2, and CE3 LOW, and WE LOW).
The CY7C1062AV25 is a high-performance CMOS Static
RAM organized as 524,288 words by 32 bits.
Writing to the device is accomplished by enabling the chip
(CE1, CE2 and CE3 LOW) and forcing the Write Enable (WE)
input LOW. If Byte Enable A (BA) is LOW, then data from I/O
pins (I/O0 through I/O7), is written into the location specified on
The CY7C1062AV25 is available in a 119-ball pitch ball grid
array (PBGA) package.
WE
CE1
CE2
CE3
OE
BA
BB
BC
BD
CONTROL LOGIC
Logic Block Diagram
512K x 32
ARRAY
4096 x 4096
OUTPUT BUFFERS
SENSE AMPS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
ROW DECODER
INPUT BUFFERS
I/O0–I/O31
A 10
A 11
A 12
A 13
A 14
A 15
A 16
A 17
A 18
COLUMN
DECODER
Selection Guide
-8
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Cypress Semiconductor Corporation
Document #: 38-05333 Rev. **
•
-10
-12
Unit
8
10
12
ns
Com’l
300
275
260
mA
Ind’l
300
275
260
Com’l/Ind’l
50
50
50
3901 North First Street
•
mA
San Jose, CA 95134
•
408-943-2600
Revised January 27, 2003
CY7C1062AV25
PRELIMINARY
Pin Configuration
119-ball PBGA
(Top View)
1
2
3
4
5
6
7
A
I/O16
A
A
A
A
A
I/O0
B
C
D
E
F
G
H
J
K
L
M
N
P
I/O17
I/O18
A
Bc
A
CE2
CE1
NC
A
CE3
A
Ba
I/O1
I/O2
I/O19
VDD
VSS
VSS
VSS
VDD
I/O3
I/O20
VSS
VDD
VSS
VDD
VSS
I/O4
I/O21
VDD
VSS
VSS
VSS
VDD
I/O5
I/O22
VSS
VDD
VSS
VDD
VSS
I/O6
I/O23
NC
VDD
VSS
VSS
VDD
VSS
VSS
VSS
VDD
VDD
VSS
I/O7
DNU
I/O24
I/O25
VDD
VSS
VSS
VDD
VSS
VSS
VSS
VDD
VDD
VSS
I/O8
I/O9
VDD
VSS
VSS
VSS
VDD
I/O10
I/O27
VSS
VDD
VSS
VDD
VSS
I/O11
I/O28
VDD
VSS
VSS
VSS
VDD
I/O12
I/O29
A
Bd
NC
Bb
A
I/O13
I/O30
A
A
WE
A
A
I/O14
I/O31
A
A
OE
A
A
I/O15
R
T
U
Document #: 38-05333 Rev. **
I/O26
Page 2 of 9
CY7C1062AV25
PRELIMINARY
Maximum Ratings
DC Input Voltage[1] ................................ –0.5V to VCC + 0.5V
(Above which the useful life may be impaired. For user guidelines, not tested.)
Current into Outputs (LOW)......................................... 20 mA
Storage Temperature .................................–65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Range
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +3.6V
Commercial
DC Voltage Applied to Outputs
in High-Z State[1] ....................................–0.5V to VCC + 0.5V
Industrial
Ambient
Temperature
VCC
0°C to +70°C
2.5V ± 0.2V
–40°C to +85°C
DC Electrical Characteristics Over the Operating Range
-8
Parameter
Description
Test Conditions
Min.
-10
Max.
2.0
Min.
-12
Max.
2.0
Min.
Max.
2.0
Unit
V
VOH
Output HIGH Voltage
VCC = Min.,
IOH = –1.0mA
VOL
Output LOW Voltage
VCC = Min.,
IOL = 1.0 mA
VIH
Input HIGH Voltage
2.0
VCC
+ 0.3
2.0
VCC
+ 0.3
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
IIX
Input Load Current
GND < VI < VCC
–1
+1
IOZ
Output Leakage Current
GND < VOUT < VCC, Output
Disabled
–1
+1
ICC
VCC Operating
Supply Current
VCC = Max., f = fMAX Com’l
= 1/tRC
Ind’l
300
300
275
260
mA
ISB1
Automatic CE
Power-down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
100
100
100
mA
ISB2
Automatic CE
Power-down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.2V,
VIN > VCC – 0.2V,
or VIN < 0.2V, f = 0
50
50
50
mA
0.4
Com’l/Ind’l
0.4
0.4
V
2.0
VCC
+ 0.3
V
0.8
–0.3
0.8
V
–1
+1
–1
+1
µA
–1
+1
–1
+1
µA
260
mA
275
Capacitance[2]
Parameter
Description
CIN
Input Capacitance
COUT
I/O Capacitance
Test Conditions
TA = 25°C, f = 1 MHz, VCC = 2.5V
Max.
Unit
8
pF
10
pF
Notes:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05333 Rev. **
Page 3 of 9
CY7C1062AV25
PRELIMINARY
AC Test Loads and Waveforms[3]
50Ω
ALL INPUT PULSES
VTH = VDD/2
OUTPUT
Z0 = 50Ω
(a)
2.5V
Including OUTPUT
Jig and
Scope
30 pF
Including all Components
R1 317Ω of Test Equipment
2.5V
90%
GND
(b)
10%
Fall time:
> 1 V/ns
Rise time > 1 V/ns
THÉVENIN EQUIVALENT
167Ω
OUTPUT
R2
351Ω
5 pF
90%
10%
1.73V
(c)
AC Switching Characteristics Over the Operating Range[4]
-8
Parameter
Description
Min.
-10
Max.
Min.
-12
Max.
Min.
Max.
Unit
Read Cycle
tpower
VCC (typical) to the first access[5]
1
tRC
Read Cycle Time
8
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1, CE2, or CE3 LOW to Data Valid
tDOE
OE LOW to Data Valid
tLZOE
OE LOW to Low-Z[6]
3
3
OE HIGH to High-Z
tLZCE
CE1, CE2, or CE3 LOW to Low-Z[6]
5
5
High-Z[6]
tHZCE
CE1, CE2, or CE3 HIGH to
tPU
CE1, CE2, or CE3 LOW to Power-up[7]
tPD
CE1, CE2, or CE3 HIGH to
tDBE
Byte Enable to Data Valid
[6]
tLZBE
Byte Enable to Low-Z
tHZBE
Byte Disable to High-Z[6]
5
5
ns
ns
6
ns
ns
6
3
5
0
ns
12
1
3
0
Power-down[7]
3
1
3
ns
12
10
5
1
ms
12
10
8
[6]
1
10
8
tHZOE
Write
1
ns
ns
6
0
ns
ns
8
10
12
ns
5
5
6
ns
1
1
5
1
5
ns
6
ns
Cycle[8, 9]
tWC
Write Cycle Time
8
10
12
ns
tSCE
CE1, CE2, or CE3 LOW to Write End
6
7
8
ns
tAW
Address Set-up to Write End
6
7
8
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
6
7
8
ns
tSD
Data Set-up to Write End
5
5.5
6
ns
tHD
Data Hold from Write End
0
0
0
ns
tLZWE
WE HIGH to Low-Z[6]
3
3
3
ns
Notes:
3. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (2.3V). As soon as 1ms (Tpower) after reaching the
minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 1.5V) voltage.
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.1V, input pulse levels of 0 to 2.3V, and output loading of the specified
IOL/IOH and transmission line loads. Test conditions for the read cycle use output loading as shown in (a) of AC Test Loads, unless specified otherwise.
5. This part has a voltage regulator that steps down the voltage from 2.3V to 2V internally. tpower time has to be provided initially before a read/write operation is
started.
6. tHZOE, tHZCE, tHZWE, tHZBE, and tLZOE, tLZCE, tLZWE, and tLZBE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured
± 200 mV from steady-state voltage.
7. These parameters are guaranteed by design and are not tested.
8. The internal write time of the memory is defined by the overlap of CE1 LOW, CE 2 HIGH, CE3 LOW, and WE LOW. The chip enables must be active and WE
must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced
to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05333 Rev. **
Page 4 of 9
CY7C1062AV25
PRELIMINARY
AC Switching Characteristics Over the Operating Range[4] (continued)
-8
Parameter
Description
Min.
[6]
tHZWE
WE LOW to High-Z
tBW
Byte Enable to End of Write
-10
Max.
Min.
5
6
-12
Max.
Min.
5
7
Max.
Unit
6
ns
8
ns
Data Retention Waveform
DATA RETENTION MODE
2.3V
VCC
2.3V
VDR > 1.5V
tR
tCDR
CE
Switching Waveforms
Read Cycle No. 1 [10, 11]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [11, 12]
ADDRESS
tRC
CE1, CE3
CE2
tACE
OE
tHZOE
tDOE
tLZOE
BA, BB, BC, BD
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
50%
Notes:
10. Device is continuously selected. OE, CE, BA, BB, BC, BD= VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05333 Rev. **
tHZBE
IICC
CC
50%
ISB
Page 5 of 9
CY7C1062AV25
PRELIMINARY
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)[13, 14, 15]
tWC
ADDRESS
CE
tSA
tSCE
tAW
tHA
tPWE
WE
t BW
BA, BB, BC, BD
tSD
tHD
DATAI/O
Write Cycle No. 2 (BLE or BHE Controlled) [13, 14, 15]
tWC
ADDRESS
tSA
tBW
BA, BB, BC, BD
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATAI/O
Notes:
13. CE indicates a combination of all three chip enables. When ACTIVE LOW, CE indicates the CE1, CE2 and CE3 are LOW.
14. Data I/O is high-impedance if OE or BA, BB, BC, BD = VIH.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05333 Rev. **
Page 6 of 9
CY7C1062AV25
PRELIMINARY
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BA, BB, BC, BD
tHZWE
tSD
tHD
DATA I/O
tLZWE
Truth Table
CE1 CE2 CE3
I/O0–
I/O7
I/O8–
I/O15
I/O16–
I/O23
I/O24–
I/O31
OE
WE
BA
BB
Bc
BD
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Power Down
Mode
(ISB)
Power
H
L
H
X
L
H
L
X
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Power Down
(ISB)
L
L
L
L
H
L
L
L
L
Data Out
Data Out
Data Out
Data Out
Read All Bits
(ICC)
L
L
L
L
H
L
H
H
H
Data Out
High-Z
High-Z
High-Z
Read Byte A
Bits Only
(ICC)
L
L
L
L
H
H
L
H
H
High-Z
Data Out
High-Z
High-Z
Read Byte B
Bits Only
(ICC)
L
L
L
L
H
H
H
L
H
High-Z
High-Z
Data Out
High-Z
Read Byte C
Bits Only
(ICC)
L
L
L
L
H
H
H
H
L
High-Z
High-Z
High-Z
Data Out
Read Byte D
Bits Only
(ICC)
L
L
L
X
L
L
L
L
L
Data In
Data In
Data In
Data In
Write All Bits
(ICC)
L
L
L
X
L
L
H
H
H
Data In
High-Z
High-Z
High-Z
Write Byte A
Bits Only
(ICC)
L
L
L
X
L
H
L
H
H
High-Z
Data In
High-Z
High-Z
Write Byte B
Bits Only
(ICC)
L
L
L
X
L
H
H
L
H
High-Z
High-Z
Data In
High-Z
Write Byte C
Bits Only
(ICC)
L
L
L
X
L
H
H
H
L
High-Z
High-Z
High-Z
Data In
Write Byte D
Bits Only
(ICC)
L
L
L
H
H
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Selected,
Outputs
Disabled
(ICC)
Document #: 38-05333 Rev. **
Page 7 of 9
PRELIMINARY
CY7C1062AV25
Ordering Information
Speed
(ns)
8
10
12
Ordering Code
CY7C1062AV25-8BGC
CY7C1062AV25-8BGI
CY7C1062AV25-10BGC
CY7C1062AV25-10BGI
CY7C1062AV25-12BGC
CY7C1062AV25-12BGI
Package
Name
BG119
Package Type
14 x 22 mm 119-ball PBGA
Operating
Range
Commercial
Industrial
Commercial
Industrial
Commercial
Industrial
Package Diagram
119-Lead PBGA (14 x 22 x 2.4 mm) BG119
51-85115-*B
All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05333 Rev. **
Page 8 of 9
© Cypress Semiconductor Corporation, 2003. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
PRELIMINARY
CY7C1062AV25
Document History Page
Document Title: CY7C1062AV25 512K x 32 Static RAM
Document Number: 38-05333
REV.
ECN NO.
Issue
Date
Orig. of
Change
**
119626
01/29/03
DFP
Document #: 38-05333 Rev. **
Description of Change
New Data Sheet
Page 9 of 9