VISHAY MURS320

MURS320
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
DO-214AB (SMC)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V
IFSM
125 A
trr
25 ns
VF
0.71 V
TJ max.
175 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS320
Maximum repetitive peak reverse voltage
VRRM
200
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
IF(AV)
3.0
4.0
A
IFSM
125
A
TJ, TSTG
- 65 to + 175
°C
Device marking code
MD
Maximum average forward rectified current at: (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Document Number: 88689
Revision: 27-Aug-07
UNIT
TL = 140 °C
TL = 130 °C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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MURS320
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
IF = 3.0 A
IF = 4.0 A
IF = 3.0 A
Maximum instantaneous reverse current
at rated DC blocking voltage (1)
SYMBOL
MURS320
UNIT
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
VF
0.875
0.890
0.710
V
TJ = 25 °C
TJ = 150 °C
IR
5.0
150
µA
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/µs,
VR = 30 V, Irr = 10 % IRM
trr
35
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/µs,
recovery to 1.0 V
tfr
25
ns
SYMBOL
MURS320
UNIT
RθJL
11
°C/W
Note:
(1) Pulse test: tp = 300 µs, duty cycle ≤ 2 %
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction to ambient
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS320-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
MURS320-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
MURS320HE3/57T (1)
0.211
57T
850
7" diameter plastic tape and reel
(1)
0.211
9AT
3500
13" diameter plastic tape and reel
MURS320HE3/9AT
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
125
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
8.0
6.0
4.0
2.0
100
75
50
25
0
0
25
0
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88689
Revision: 27-Aug-07
MURS320
Vishay General Semiconductor
1000
TJ = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 100 °C
TJ = 25 °C
1
0.1
0.01
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Voltage
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Current (µA)
1000
TJ = 175 °C
100
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 88689
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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