VISHAY ES2GHE3/5BT

ES2F & ES2G
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-214AA (SMB)
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
300 V, 400 V
IFSM
50 A
trr
35 ns
VF
1.1 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
ES2F
ES2G
EF
EG
UNIT
Maximum repetitive peak reverse voltage
VRRM
300
400
V
Working peak reverse voltage
VRWM
225
300
V
210
280
V
Maximum RMS voltage
VRMS
Maximum average forward rectified current at TL = 110 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 88588
Revision: 20-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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ES2F & ES2G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
SYMBOL
2.0 A
TA = 25 °C
TA = 100 °C
Maximum reverse current at VRRM
ES2F
ES2G
UNIT
VF
1.1
V
IR
10
200
µA
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
trr
50
ns
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
IRM
3.0
A
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
Qrr
50
nC
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2F
RθJA
RθJL
Maximum thermal resistance (1)
ES2G
UNIT
75
25
°C/W
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES2G-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
ES2G-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
ES2GHE3/52T (1)
0.096
52T
750
7" diameter plastic tape and reel
ES2GHE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
60
Resistive or Inductive Load
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
3.0
2.0
1.0
8.3 ms Single Half Sine-Wave
at TL = 110 °C
50
40
30
20
10
0
0
80
90
100
110
120
130
140
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88588
Revision: 20-Nov-07
ES2F & ES2G
Vishay General Semiconductor
200
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2
120
at 2 A, 20 A/µs
at 5 A, 50 A/µs
80
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
40
trr
Qrr
0
0.4
0.6
0.8
1
1.2
25
1.4
50
75
100
125
150
175
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
100
Junction Capacitance (pF)
Instantaneous Reverse Leakage
Current (µA)
at 5 A, 50 A/µs
160
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
1
0.1
0.1
0
20
40
60
80
10
100
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.180 (4.57)
0.160 (4.06)
0.086 MIN.
(2.18 MIN.)
0.060 MIN.
(1.52 MIN.)
0.012 (0.305)
0.006 (0.152)
0.220 REF
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88588
Revision: 20-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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