MA-COM MAPLST0810

RF Power Field Effect Transistor
LDMOS, 865 — 960 MHz, 30W, 26V
5/14/04
MAPLST0810-030CF
Preliminary
Features
Q
Q
Q
Q
Q
Package Style
Designed for 865 to 960 MHz Broadband
Commercial and Base Station
Applications.
Typical CW RF Performance at 960MHz,
26VDC:
Q POUT: 30W (P1dB)
Q Gain: 18dB
Q Efficiency: 50%
Ruggedness: 10:1 VSWR @ 30W CW,
26V, 925MHz
High Gain, High Efficiency and High
Linearity
Excellent Thermal Stability
P-239
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
VDSS
65
Vdc
Gate—Source Voltage
VGS
20
Vdc
Total Power Dissipation @ TC = 25 °C
PD
97
W
Storage Temperature
TSTG
-40 to +150
°C
Junction Temperature
TJ
+200
°C
Symbol
Max
Unit
RΘJC
1.8
ºC/W
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V
MAPLST0810-030CF
5/14/04
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
—
1
µAdc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
—
3
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µA)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 mA)
VDS(Q)
—
4.0
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
—
0.20
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
—
2.0
—
S
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
50
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
32
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.4
—
pF
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
GP
—
18
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
EFF (ŋ)
—
50
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
IRL
—
12
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
DYNAMIC CHARACTERISTICS @ 25ºC
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
No Degradation In Output Power
Before and After Test
2
RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V
MAPLST0810-030CF
5/14/04
Preliminary
30
60
VDD = 26V, f = 960MHz, IDQ = 300mA,
100kHz Tone Spacing
45
Gain
20
15
30
15
Efficiency
10
Efficiency (%)
Gain (dB)
25
0
15
20
25
30
35
40
45
50
POUT (dBm) PEP
Graph 1. Power Gain and Drain Efficiency vs. Output Power
-20
VDD = 26V, f = 960MHz, IDQ = 300mA,
100kHz Tone Spacing
-30
IMD (dBc)
-40
3rd Order
-50
-60
7th Order
-70
5th Order
-80
-90
15
20
25
30
35
40
45
50
POUT(dBm) PEP
Graph 2. Intermodulation Distortion vs. Output Power
3
RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V
MAPLST0810-030CF
5/14/04
Preliminary
Package Dimensions
Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
4
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