MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise ηadd G1dB IDS1 ( Ta= 25°C ) CONDITIONS VDS=10V f= 5.0 to 5.3GHz ΔG IM3 IDS2 ΔTch Two-Tone Test Po=28.5dBm UNIT dBm MIN. 38.5 dB 8.0 9.0 ⎯ A ⎯ 2.2 2.6 dB % dBc ⎯ ⎯ -42 ⎯ 35 -45 ±0.6 A °C ⎯ ⎯ 2.2 2.6 80 UNIT mS MIN. MAX. ⎯ TYP. 1800 V -1.0 -2.5 -4.0 A ⎯ 5.2 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 2.5 3.8 (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) TYP. MAX. 39.5 ⎯ ⎯ ⎯ ⎯ Recommended Gate Resistance(Rg) : 150 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25°C ) Gm VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5053-8SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 7.0 Total Power Dissipation (Tc= 25 °C) PT W 39.5 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5053-8SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V IDS≅2.2A Pin=30.5dBm 40 39 38 37 5.0 5.1 5.2 5.3 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=5.3GHz 41 VDS=10V IDS≅2.2A 40 80 Pout 70 38 60 37 50 36 40 ηadd 35 30 34 20 33 10 24 26 28 30 Pin(dBm) 3 32 34 ηadd(%) Pout(dBm) 39 TIM5053-8SL Power Dissipation vs. Case Temperature 40 PT (W) 30 20 10 0 40 80 120 160 200 Tc (°C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅2.2A -20 freq.=5.3GHz Δf=5MHz IM3(dBc) -30 -40 -50 -60 24 26 28 30 Pout(dBm) @Single carrier level 4 32 34