RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Q 60W output power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) MAPLST2122-060CF Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 175 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 1.0 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Characteristic Symbol DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(VCHARACTERISTICS Symbol V(BR)DSS Min 65 Typ — Max — Unit Vdc Zero Gate Voltage Drain Leakage Current (VDS 65 Vdc, VGS DS = 28 GS = 0) IDSS IDSS —— —— 101 µAdc µAdc Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (V 0)0) DS = = (VGS = =5 26Vdc, Vdc,VV IGSS IDSS —— —— 11 µAdc µAdc Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) VGS(th) IGSS 2 — — — 1 4 Vdc µAdc Gate Quiescent Voltage ON (V CHARACTERISTICS DS = 28 Vdc, ID = 500 mA) VDS(Q) 2 — 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) VDS(on) — 0.4 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) Gm — 2.4 — S Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss — 180 — pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss — 65 — pF Crss — 3.0 — pF Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps — 12.0 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) EFF (ŋ) — 35 — % Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD — -30 -28 dBc Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL — -12 — dB Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps — 12.0 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) EFF (ŋ) — 35 — % Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — -30 -28 dBc Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — -12 -9 dB DS Min Typ Max Unit GS DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance FUNCTIONAL TESTS (In M/A-COM (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Test Fixture) (2) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 60 W, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary C1 Ceramic Chip Capacitor, 10 pF C2,C5 Ceramic Chip Capacitor, 0.5 pF C3,C4 Ceramic Chip Capacitor, 1.8 pF C6,C7,C12,C13 Chip Capacitor, 8.2 pF C8, C10 Chip Capacitor, 1 µF C9, C11 Chip Capacitor, 0.1 µF C14,C15 Ceramic Capacitor, 100 µF Z1-Z8 Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft B Series L2, L3 Inductor, 18.5 nH, CoilCraft B Series P1,P2 Connector, 5 Pin Q1 Transistor, MAPLST2122-060CF R1 Chip Resistor, 10 Ohm PC Board (74350144-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary 25 14 VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH 20 Gain (dB) 12 11 Gain 15 10 10 9 8 Efficiency Efficiency (%) 13 5 7 6 0 25 30 35 40 POUT (dBm) Avg. Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power -30 VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH -35 ACPR (dBc) -40 -45 -50 5MHz Offset -55 -60 10MHz Offset -65 -70 -75 -80 25 27 29 31 33 35 37 39 41 POUT (dBm) Avg. Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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