Order this document by MRF428/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 DB Efficiency = 45% • Intermodulation Distortion @ 150 W (PEP) — IMD = -32 db (Max) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW 150 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 55 Vdc Collector-Base Voltage VCBO 110 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 20 Adc Withstand Current — 10 s — 30 Adc Total Device Dissipation @ T C = 25 °C Derate above 25 °C PD 320 1.83 Watts W/°C Storage Temperature Range Tstg -65 to +150 °C Symbol Max Unit RθJC 0.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 55 — — Vdc Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 110 — — Vdc Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 110 — — Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc OFF CHARACTERISTICS (continued) 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25 °C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 30 — — COB — 220 250 pF Common-Emitter Amplifier Gain (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, f = 30 MHz) GPE 13 15 — dB Output Power (VCE = 50 Vdc, f = 30 MHz) POUT 150 — — W (PEP) η 45 — — % IMD — -33 -30 dB ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Collector Efficiency (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, f = 30 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, POUT = 150 W (PEP), IC = 3.32 Adc) Electrical Ruggedness (VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc, VSWR 30:1 at all Phase Angles) Ψ No Degradation in Output Power NOTE: 1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone. C1,C2,C7 — 170-780 pF, Arco 469 C3,C8,C9 — 0.1µF, 100 V Erie C4 — 500 µF @ 6.0 V C5 — 9.0-180 pF, Arco 463 C6 — 80-480 pF, Arco 466 C10 — 30 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D. L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B Figure 1. 30 MHz Test Circuit Schematic 2 3 Figure 10. Series Equivalent Impedance 4 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION INCH. STYLE 1: PIN 1 EMITTER PIN 2 BASE PIN 3 EMITTER PIN 4 COLLECTOR INCHES DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 — 11.05 — M Case 211-11 Specifications subject to change without notice. n North America: Tel. (800) 366-2266, n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 MILLIMETERS 45 °NOM 45 °NOM Q 0.115 0.130 2.93 R 0.246 0.255 6.25 3.30 6.47 U 0.720 0.730 18.29 18.54