VISHAY TLS210

TLS.210.
Vishay Semiconductors
Symbol LED in 2 x 5 mm Flat and Tinted Top-Diffused
Package
Color
Red
Yellow
Green
Type
Technology
TLSH210.
TLSY210.
TLSG210.
GaAsP on GaP
GaAsP on GaP
GaP on GaP
Angle of Half Intensity
±ö
50°
50°
50°
Description
This series was developed for use as compact surface
display.
It is housed in a 2x5 mm rectangular molded package.
This device has a flat tinted, top diffused package for
uniform brightness when used in panels.
The symbol LEDs are available in three bright colors:
high efficiency red, yellow and green.
Features
D
D
D
D
D
D
D
D
96 11498
Choice of three bright colors
Applications
Uniform illumination
Status lights
Background illumination
Maintenance lights
Indicator of audio and visual equipment
Off / On indicator
Readout lights
Legend lights
Illumination of moving boards
Luminous intensity selected into groups
Suitable for DC and pulse operation
Flat light emitting surface
Direct symbol indication is possible
Yellow and green color categorized
Wide viewing angle
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLSH210. ,TLSY210. ,TLSG210. ,
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Document Number 83050
Rev. A3, 05-Oct-00
Test Conditions
tp ≤ 10 ms
Tamb ≤ 65°C
t ≤ 5 s, 2 mm from body
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
30
1
100
100
–40 to +100
–55 to +100
260
350
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
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TLS.210.
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
Red (TLSH210. )
Parameter
Luminous intensity 1)
Test Conditions
IF = 10 mA
Type
TLSH2100
TLSH2101
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
1) in one Packing Unit I Min./ I Max.
0.5
V
V
v
Symbol
IV
IV
ld
lp
ϕ
VF
VR
Cj
Min
0.63
1
Symbol
IV
IV
ld
lp
ϕ
VF
VR
Cj
Min
0.63
1
581
Symbol
IV
IV
ld
lp
ϕ
VF
VR
Cj
Min
1
1.6
562
6
Typ
2
2.5
640
650
±50
2
15
50
Max
Typ
2
2
Max
3
Unit
mcd
mcd
nm
nm
deg
V
V
pF
Yellow (TLSY210. )
Parameter
Luminous intensity 1)
Test Conditions
IF = 10 mA
Type
TLSY2100
TLSY2101
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
1) in one Packing Unit I Min./ I Max.
0.5
V
V
v
6
594
585
±50
2.4
15
50
3
Unit
mcd
mcd
nm
nm
deg
V
V
pF
Green (TLSG210. )
Parameter
Luminous intensity 1)
Test Conditions
IF = 10 mA
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
1) in one Packing Unit I Min./ I Max.
0.5
V
V
v
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2 (7)
Type
TLSG2100
TLSG2101
6
Typ
2
2.5
Max
575
565
±50
2.4
15
50
3
Unit
mcd
mcd
nm
nm
deg
V
V
pF
Document Number 83050
Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0°
Iv rel – Relative Luminous Intensity
PV – Power Dissipation ( mW )
125
100
75
50
25
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10918
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10082
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs.
Angular Displacement
1000
60
Red
IF – Forward Current ( mA )
IF – Forward Current ( mA )
50
40
30
20
100
tp/T=0.001
tp=10ms
10
1
10
0.1
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10046
0
tp/T=0.01
Iv rel – Relative Luminous Intensity
IF – Forward Current ( mA )
10
8
1.6
0.02
0.05
0.1
100 0.2
0.5
1
10
Tamb
95 10079
6
Figure 5. Forward Current vs. Forward Voltage
10000
1
0.01
4
VF – Forward Voltage ( V )
96 11593
Figure 2. Forward Current vs. Ambient Temperature
1000
2
0.1
1
v65°C
10
1.2
0.8
0.4
IF=10mA
0
100
tp – Pulse Length ( ms )
Figure 3. Forward Current vs. Pulse Length
Document Number 83050
Rev. A3, 05-Oct-00
Red
0
96 11594
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
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TLS.210.
Vishay Semiconductors
1000
Red
2.0
IF – Forward Current ( mA )
Iv rel – Relative Luminous Intensity
2.4
1.6
1.2
0.8
Yellow
100
tp/T=0.001
tp=10ms
10
1
0.4
IFAV=10mA, const.
0
0.1
10
20
1
96 11595
50
0.5
0.2
100
0.1
200
0.05
500
IF(mA)
0.02
tp/T
Figure 7. Rel. Lumin. Intensity vs.
Forw. Current / Duty Cycle
0
6
8
10
1.6
Red
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
4
VF – Forward Voltage ( V )
Figure 10. Forward Current vs. Forward Voltage
10
1
0.1
Yellow
1.2
0.8
0.4
0.01
IF=10mA
0
1
100
10
IF – Forward Current ( mA )
96 11596
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10031
Figure 8. Relative Luminous. Intensity vs.Forward. Current
Figure 11. Rel. Luminous Intensity vs
Ambient Temperature
2.4
Iv rel – Relative Luminous Intensity
1.2
Iv rel – Relative Luminous Intensity
2
95 10030
Red
1.0
0.8
0.6
0.4
0.2
0
600
96 11597
1.6
1.2
0.8
0.4
0
620
640
660
680
700
l – Wavelength ( nm )
Figure 9. Relative Luminous. Intensity vs.Wavelength
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Yellow
2.0
95 10260
10
20
50
1
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
Figure 12. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
Document Number 83050
Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors
1.6
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
10
Yellow
1
0.1
Green
1.2
0.8
0.4
0.01
1
100
10
IF – Forward Current ( mA )
95 10033
0
60
80
100
2.4
Yellow
Iv rel– Specific Luminous Intensity
Iv rel – Relative Luminous Intensity
40
Figure 16. Rel. Luminous Intensity vs.
Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
550
Green
2.0
1.6
1.2
0.8
0.4
0
570
590
610
630
650
l – Wavelength ( nm )
95 10039
10
20
50
100
200
500
IF – Forward Current ( mA )
95 10263
Figure 14. Relative Luminous Intensity vs. Wavelength
Figure 17. Specific Luminous Intensity vs. Forward Current
1000
Iv rel – Relative Luminous Intensity
10
Green
IF – Forward Current ( mA )
20
Tamb – Ambient Temperature ( °C )
95 10035
Figure 13. Relative Luminous Intensity vs.
Forward Current
100
10
tp/T=0.001
tp=10ms
1
0.1
Green
1
0.1
0.01
0
95 10034
IF=10mA
0
2
4
6
8
VF – Forward Voltage ( V )
Figure 15. Rel. Luminous Intensity vs
. Ambient Temperature
Document Number 83050
Rev. A3, 05-Oct-00
10
1
95 10037
10
100
IF – Forward Current ( mA )
Figure 18. Relative Luminous Intensity vs.
Forward Current
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TLS.210.
Vishay Semiconductors
Iv rel – Relative Luminous Intensity
1.2
Green
1.0
0.8
0.6
0.4
0.2
0
520
95 10038
540
560
580
600
620
l – Wavelength ( nm )
Figure 19. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11266
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Document Number 83050
Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83050
Rev. A3, 05-Oct-00
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