TLS.210. Vishay Semiconductors Symbol LED in 2 x 5 mm Flat and Tinted Top-Diffused Package Color Red Yellow Green Type Technology TLSH210. TLSY210. TLSG210. GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half Intensity ±ö 50° 50° 50° Description This series was developed for use as compact surface display. It is housed in a 2x5 mm rectangular molded package. This device has a flat tinted, top diffused package for uniform brightness when used in panels. The symbol LEDs are available in three bright colors: high efficiency red, yellow and green. Features D D D D D D D D 96 11498 Choice of three bright colors Applications Uniform illumination Status lights Background illumination Maintenance lights Indicator of audio and visual equipment Off / On indicator Readout lights Legend lights Illumination of moving boards Luminous intensity selected into groups Suitable for DC and pulse operation Flat light emitting surface Direct symbol indication is possible Yellow and green color categorized Wide viewing angle Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified TLSH210. ,TLSY210. ,TLSG210. , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 83050 Rev. A3, 05-Oct-00 Test Conditions tp ≤ 10 ms Tamb ≤ 65°C t ≤ 5 s, 2 mm from body Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 1 100 100 –40 to +100 –55 to +100 260 350 Unit V mA A mW °C °C °C °C K/W www.vishay.com 1 (7) TLS.210. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25_C, unless otherwise specified Red (TLSH210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Type TLSH2100 TLSH2101 Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V v Symbol IV IV ld lp ϕ VF VR Cj Min 0.63 1 Symbol IV IV ld lp ϕ VF VR Cj Min 0.63 1 581 Symbol IV IV ld lp ϕ VF VR Cj Min 1 1.6 562 6 Typ 2 2.5 640 650 ±50 2 15 50 Max Typ 2 2 Max 3 Unit mcd mcd nm nm deg V V pF Yellow (TLSY210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Type TLSY2100 TLSY2101 Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V v 6 594 585 ±50 2.4 15 50 3 Unit mcd mcd nm nm deg V V pF Green (TLSG210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V v www.vishay.com 2 (7) Type TLSG2100 TLSG2101 6 Typ 2 2.5 Max 575 565 ±50 2.4 15 50 3 Unit mcd mcd nm nm deg V V pF Document Number 83050 Rev. A3, 05-Oct-00 TLS.210. Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0° Iv rel – Relative Luminous Intensity PV – Power Dissipation ( mW ) 125 100 75 50 25 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 10918 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10082 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 1000 60 Red IF – Forward Current ( mA ) IF – Forward Current ( mA ) 50 40 30 20 100 tp/T=0.001 tp=10ms 10 1 10 0.1 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 10046 0 tp/T=0.01 Iv rel – Relative Luminous Intensity IF – Forward Current ( mA ) 10 8 1.6 0.02 0.05 0.1 100 0.2 0.5 1 10 Tamb 95 10079 6 Figure 5. Forward Current vs. Forward Voltage 10000 1 0.01 4 VF – Forward Voltage ( V ) 96 11593 Figure 2. Forward Current vs. Ambient Temperature 1000 2 0.1 1 v65°C 10 1.2 0.8 0.4 IF=10mA 0 100 tp – Pulse Length ( ms ) Figure 3. Forward Current vs. Pulse Length Document Number 83050 Rev. A3, 05-Oct-00 Red 0 96 11594 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 3 (7) TLS.210. Vishay Semiconductors 1000 Red 2.0 IF – Forward Current ( mA ) Iv rel – Relative Luminous Intensity 2.4 1.6 1.2 0.8 Yellow 100 tp/T=0.001 tp=10ms 10 1 0.4 IFAV=10mA, const. 0 0.1 10 20 1 96 11595 50 0.5 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T Figure 7. Rel. Lumin. Intensity vs. Forw. Current / Duty Cycle 0 6 8 10 1.6 Red Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity 4 VF – Forward Voltage ( V ) Figure 10. Forward Current vs. Forward Voltage 10 1 0.1 Yellow 1.2 0.8 0.4 0.01 IF=10mA 0 1 100 10 IF – Forward Current ( mA ) 96 11596 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 10031 Figure 8. Relative Luminous. Intensity vs.Forward. Current Figure 11. Rel. Luminous Intensity vs Ambient Temperature 2.4 Iv rel – Relative Luminous Intensity 1.2 Iv rel – Relative Luminous Intensity 2 95 10030 Red 1.0 0.8 0.6 0.4 0.2 0 600 96 11597 1.6 1.2 0.8 0.4 0 620 640 660 680 700 l – Wavelength ( nm ) Figure 9. Relative Luminous. Intensity vs.Wavelength www.vishay.com 4 (7) Yellow 2.0 95 10260 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83050 Rev. A3, 05-Oct-00 TLS.210. Vishay Semiconductors 1.6 Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity 10 Yellow 1 0.1 Green 1.2 0.8 0.4 0.01 1 100 10 IF – Forward Current ( mA ) 95 10033 0 60 80 100 2.4 Yellow Iv rel– Specific Luminous Intensity Iv rel – Relative Luminous Intensity 40 Figure 16. Rel. Luminous Intensity vs. Ambient Temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 550 Green 2.0 1.6 1.2 0.8 0.4 0 570 590 610 630 650 l – Wavelength ( nm ) 95 10039 10 20 50 100 200 500 IF – Forward Current ( mA ) 95 10263 Figure 14. Relative Luminous Intensity vs. Wavelength Figure 17. Specific Luminous Intensity vs. Forward Current 1000 Iv rel – Relative Luminous Intensity 10 Green IF – Forward Current ( mA ) 20 Tamb – Ambient Temperature ( °C ) 95 10035 Figure 13. Relative Luminous Intensity vs. Forward Current 100 10 tp/T=0.001 tp=10ms 1 0.1 Green 1 0.1 0.01 0 95 10034 IF=10mA 0 2 4 6 8 VF – Forward Voltage ( V ) Figure 15. Rel. Luminous Intensity vs . Ambient Temperature Document Number 83050 Rev. A3, 05-Oct-00 10 1 95 10037 10 100 IF – Forward Current ( mA ) Figure 18. Relative Luminous Intensity vs. Forward Current www.vishay.com 5 (7) TLS.210. Vishay Semiconductors Iv rel – Relative Luminous Intensity 1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520 95 10038 540 560 580 600 620 l – Wavelength ( nm ) Figure 19. Relative Luminous Intensity vs. Wavelength Dimensions in mm 95 11266 www.vishay.com 6 (7) Document Number 83050 Rev. A3, 05-Oct-00 TLS.210. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83050 Rev. A3, 05-Oct-00 www.vishay.com 7 (7) This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.