TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors Sideview LED, 5 mm Tinted Diffused Features • • • • • Even luminance of the emitting surface Wide viewing angle Yellow and green color categorized For DC and pulse operation Lead-free device Applications 19227 Indicating and illumination purposes e4 Pb Pb-free Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLPR5600 Red, IV > 1 mcd TLPH5600 Red, IV > 0.63 mcd 80 ° GaAsP on GaP TLPY5600 Yellow, IV > 0.63 mcd 80 ° GaAsP on GaP TLPG5600 Green, IV > 0.63 mcd 80 ° GaP on GaP TLPP5600 Pure green, IV > 0.63 mcd 80 ° GaP on GaP 80 ° GaAsP on GaP Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLPR5600, TLPH5600 , TLPY5600 , TLPG5600 , TLPP5600 Parameter Test condition Part Symbol Value VR 6 V IF 20 mA TLPH5600 IF 30 mA TLPY5600 IF 30 mA TLPG5600 IF 30 mA mA Reverse voltage DC Forward current TLPR5600 Unit IF 30 IFSM 1 A PV 60 mW TLPH5600 PV 100 mW TLPY5600 PV 100 mW TLPG5600 PV 100 mW TLPP5600 PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C TLPP5600 Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Junction temperature Soldering temperature Document Number 83043 Rev. 1.7, 31-Aug-04 t ≤ 5 s, 2 mm from body TLPR5600 www.vishay.com 1 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors Parameter Test condition Thermal resistance junction/ ambient Part Symbol Value Unit TLPR5600 RthJA 500 K TLPH5600 RthJA 400 K/W TLPY5600 RthJA 400 K/W TLPG5600 RthJA 400 K/W TLPP5600 RthJA 400 K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLPR5600 Parameter Symbol Min Typ. IF = 10 mA IV 1 2.5 mcd Dominant wavelength IF = 10 mA λd 630 nm Peak wavelength IF = 10 mA λp 640 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj Luminous intensity 1) 1) Test condition 2 6 Max 3 Unit V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Red TLPH5600 Parameter Symbol Min Typ. IF = 10 mA IV 0.63 1.5 Dominant wavelength IF = 10 mA λd 612 Peak wavelength IF = 10 mA λp 635 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj Luminous intensity 1) 1) Test condition Unit mcd 625 2 6 Max 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Yellow TLPY5600 Parameter Symbol Min Typ. IF = 10 mA IV 0.63 1.5 Dominant wavelength IF = 10 mA λd 581 Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Luminous intensity 1) Test condition Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 www.vishay.com 2 Unit mcd 594 2.4 6 Max Document Number 83043 Rev. 1.7, 31-Aug-04 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors Green TLPG5600 Parameter Symbol Min Typ. IF = 10 mA IV 0.63 1.5 Dominant wavelength IF = 10 mA λd 562 Peak wavelength IF = 10 mA λp 565 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Luminous intensity Test condition 1) Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Max 575 2.4 6 Unit mcd 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Pure green TLPP5600 Parameter Symbol Min Typ. IF = 10 mA IV 0.63 1.6 Dominant wavelength IF = 10 mA λd 555 Peak wavelength IF = 10 mA λp 555 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Luminous intensity Test condition 1) Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Max 565 2.4 6 Unit mcd 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 40 80 60 Red 40 20 30 25 20 Red 15 10 5 0 0 0 17520 Red,Yellow, Green, Pure Green 35 Red, Yellow, Green, Pure Green I F -Forward Current ( mA ) PV –Power Dissipation (mW) 100 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Document Number 83043 Rev. 1.7, 31-Aug-04 0 17519 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 3 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity 10000 t p /T= 0.01 1000 0.02 0.05 100 1 10 0.5 0.2 1 0.01 0.1 1 1.2 0.8 0.4 I F = 10 mA 100 10 t p - Pulse Length ( ms ) 95 10047 20 30° 40° 1.0 0.9 50° 0.8 60° 0.7 70° 80° 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 20° 10 ° 0° 0 95 10074 Figure 3. Forward Current vs. Pulse Length Iv rel - Relative Luminous Intensity Red 0 0.1 10 I v rel - Relative Luminous Intensity IF - Forward Current ( mA ) Tamb ≤ı 65 ° C 1.6 Red 1 0.1 0.01 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10078 1 10 I F - Forward Current ( mA ) 95 10076 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 100 Figure 7. Relative Luminous Intensity vs. Forward Current 100 1.2 I rel – Relative Intensity I F - Forward Current ( mA ) Red 1.0 10 1 0.1 0 1 2 3 4 Figure 5. Forward Current vs. Forward Voltage www.vishay.com 4 0.6 0.4 0.2 0.0 550 5 VF - Forward Voltage ( V ) 16634 0.8 17521 590 630 670 710 750 l – Wavelength ( nm ) Figure 8. Relative Intensity vs. Wavelength Document Number 83043 Rev. 1.7, 31-Aug-04 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 1000 Red 100 t p /T = 0.001 t p = 10 µs 10 1 Red 1 0.1 0.01 0.1 0 2 4 6 8 I F - Forward Current ( mA ) Figure 12. Relative Luminous Intensity vs. Forward Current I V re l - Relative Luminous Intensity 0.8 0.4 I F = 10 mA 0 0 20 40 60 80 Red 1.0 0.8 0.6 0.4 0.2 0 590 100 Tamb - Ambient Temperature ( °C ) 95 10027 610 630 650 670 690 λ -ı Wavelength ( nm ) 95 10040 Figure 13. Relative Intensity vs. Wavelength Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 1000 2.4 Red I F - Forward Current ( mA ) I V re l - Relative Luminous Intensity 100 1.2 Red 1.2 2.0 1.6 1.2 0.8 0.4 Yellow 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 95 10321 10 95 10029 Figure 9. Forward Current vs. Forward Voltage 1.6 1 10 V F - Forward Voltage ( V ) 95 10026 I v rel - Relative Luminous Intensity 10 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83043 Rev. 1.7, 31-Aug-04 0 95 10030 2 4 6 8 10 V F - Forward Voltage ( V ) Figure 14. Forward Current vs. Forward Voltage www.vishay.com 5 TLPG / H / P / R / Y5600 VISHAY 1.6 1.2 Yellow IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors 1.2 0.8 0.4 0 I F = 10 mA 0 20 40 60 80 0.8 0.6 0.4 0.2 0 550 100 Tamb - Ambient Temperature ( °C ) 95 10031 Yellow 1.0 2.0 I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 1.6 1.2 0.8 0.4 10 20 50 100 200 500 I F (mA) 650 1 0.5 0.2 0.1 0.05 0.02 tp /T Green 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 10 Yellow 1 0.1 0.01 1 95 10033 Figure 17. Relative Luminous Intensity vs. Forward Current www.vishay.com 1.6 6 8 10 Green 1.2 0.8 0.4 100 I F - Forward Current ( mA ) 4 Figure 19. Forward Current vs. Forward Voltage 0 10 2 V F - Forward Voltage ( V ) 95 10034 I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 630 1000 Yellow Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 6 610 Figure 18. Relative Intensity vs. Wavelength 2.4 95 10260 590 λ - Wavelength ( nm ) 95 10039 Figure 15. Rel. Luminous Intensity vs. Ambient Temperature 0 570 95 10035 I F = 10 mA 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 20. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83043 Rev. 1.7, 31-Aug-04 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors 100 Green 2.0 Pure Green I F – Forward Current ( mA ) I v rel - Specific Luminous Intensity 2.4 1.6 1.2 0.8 0.4 0 95 10263 10 1 20 0.5 50 0.2 100 0.1 500 IF(mA) 0.02 tp/T 200 0.05 10 1 0.1 0 4 5 2.0 I Vrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 3 Figure 24. Forward Current vs. Forward Voltage 10 Green 1 0.1 Pure Green 1.6 1.2 0.8 0.4 0 1 10 100 I F - Forward Current ( mA ) 95 10037 0 20 40 60 80 100 Tamb − Ambient Temperature ( °C ) 95 9991 Figure 22. Relative Luminous Intensity vs. Forward Current Figure 25. Rel. Luminous Intensity vs. Ambient Temperature 1.2 2.4 Green 1.0 Pure Green I Spec - Specific Luninous Flux IVrel - Relative Luminous Intensity 2 V F – Forward Voltage ( V ) 95 9988 Figure 21. Specific Luminous Intensity vs. Forward Current 0.8 0.6 0.4 0.2 0 520 95 10038 1 2.0 1.6 1.2 0.8 0.4 0 540 560 580 600 620 λ - Wavelength ( nm ) Figure 23. Relative Intensity vs. Wavelength Document Number 83043 Rev. 1.7, 31-Aug-04 10 95 10261 100 1000 I F - Forward Current ( mA ) Figure 26. Specific Luminous Intensity vs. Forward Current www.vishay.com 7 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors 1.2 Pure Green I Vrel - Relative Luminous Intensity I Vrel - Relative Luminous Intensity 10 1 0.1 0.01 1 95 9998 10 100 I F - Forward Current ( mA ) Figure 27. Relative Luminous Intensity vs. Forward Current Pure Green 1.0 0.8 0.6 0.4 0.2 0 500 95 10325 520 540 560 580 600 λ - Wavelength ( nm ) Figure 28. Relative Intensity vs. Wavelength Package Dimensions in mm 95 11321 www.vishay.com 8 Document Number 83043 Rev. 1.7, 31-Aug-04 TLPG / H / P / R / Y5600 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83043 Rev. 1.7, 31-Aug-04 www.vishay.com 9