VISHAY TLHO4900

TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
High Efficiency LED in ∅ 3 mm Clear Package
Description
The TLH.4900 series was developed for applications
where high light output is required.
It is housed in a 3 mm clear plastic package. The
small viewing angle of these devices provides a high
brightness.
All LEDs are categorized in luminous intensity
groups. The green and yellow LEDs are categorized
additionally in wavelength groups.
That allows users to assemble LEDs with uniform
appearance.
19222
e2 Pb
Pb-free
Features
Applications
•
•
•
•
•
•
•
•
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Choice of five bright colors
Standard ∅ 3 mm (T-1) package
Small mechanical tolerances
Suitable for DC and high peak current
Very small viewing angle
Luminous intensity categorized
Yellow and green color categorized
Lead-free device
Parts Table
Part
Color, Luminous Intensity
TLHR4900
Red, IV > 6.3 mcd
Angle of Half Intensity (±ϕ)
Technology
16 °
GaAsP on GaP
TLHO4900
Soft orange, IV > 10 mcd
16 °
GaAsP on GaP
TLHY4900
Yellow, IV > 10 mcd
16 °
GaAsP on GaP
TLHG4900
Green, IV > 16 mcd
16 °
GaP on GaP
TLHP4900
Pure green, IV > 4 mcd
16 °
GaP on GaP
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLHR4900 , TLHO4900 , TLHY4900 , TLHP4900
Parameter
Test condition
Reverse voltage
DC Forward current
Tamb ≤ 60 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 60 °C
Junction temperature
Operating temperature range
Document Number 83009
Rev. 1.5, 31-Aug-04
Symbol
Value
VR
6
Unit
V
IF
30
mA
IFSM
1
A
PV
100
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
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TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
Parameter
Test condition
Symbol
Value
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
400
K/W
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/
ambient
Unit
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLHR4900
Parameter
Symbol
Min
Typ.
IF = 10 mA
IV
6.3
13
Dominant wavelength
IF = 10 mA
λd
612
Peak wavelength
IF = 10 mA
λp
635
Luminous intensity
1)
Test condition
Angle of half intensity
IF = 10 mA
ϕ
± 16
IF = 20 mA
VF
2
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
Unit
mcd
625
Forward voltage
6
Max
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Soft Orange
TLHO4900
Parameter
Symbol
Min
Typ.
IF = 10 mA
IV
10
26
Dominant wavelength
IF = 10 mA
λd
598
Peak wavelength
IF = 10 mA
λp
605
Luminous intensity
1)
Test condition
Angle of half intensity
IF = 10 mA
ϕ
± 16
IF = 20 mA
VF
2.4
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
Unit
mcd
611
Forward voltage
6
Max
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Yellow
TLHY4900
Parameter
Symbol
Min
Typ.
IF = 10 mA
IV
10
26
Dominant wavelength
IF = 10 mA
λd
581
Peak wavelength
IF = 10 mA
λp
585
Luminous intensity
1)
Test condition
Angle of half intensity
IF = 10 mA
ϕ
± 16
IF = 20 mA
VF
2.4
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
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2
Unit
mcd
594
Forward voltage
6
Max
Document Number 83009
Rev. 1.5, 31-Aug-04
TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
Green
TLHG4900
Parameter
Luminous intensity
Test condition
1)
Symbol
Min
Typ.
IF = 10 mA
IV
16
37
562
Max
Unit
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
565
nm
Angle of half intensity
IF = 10 mA
ϕ
± 16
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
575
2.4
6
3
nm
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Pure green
TLHP4900
Parameter
Symbol
Min
Typ.
IF = 10 mA
IV
4
13
Dominant wavelength
IF = 10 mA
λd
555
Peak wavelength
IF = 10 mA
λp
555
nm
Angle of half intensity
IF = 10 mA
ϕ
± 16
deg
Luminous intensity
Test condition
1)
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
Max
565
2.4
6
Unit
mcd
3
nm
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
IF - Forward Current ( mA)
PV - Power Dissipation ( mW )
125
100
75
50
25
0
95 10904
0
20
40
60
80
Figure 1. Power Dissipation vs. Ambient Temperature
Rev. 1.5, 31-Aug-04
40
30
20
10
0
100
Tamb - Ambient Temperature ( °C )
Document Number 83009
50
0
95 10905
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature for InGaN
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TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
I v rel - Relative Luminous Intensity
10000
t p /T= 0.01
1000
0.02
0.05
100
1
10
0.5 0.2
0.1
0.1
1
I v rel - Relative Luminous Intensity
0°
10 °
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.4
0.2
0
0.2
0.4
0.4
I F = 10 mA
0
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Red
100
t p /T = 0.001
t p = 10 µs
1
60
80
100
2.4
Red
2.0
1.6
1.2
0.8
0.4
0
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I v rel - Relative Luminous Intensity
1000
40
Tamb - Ambient Temperature ( °C )
95 10321
10
20
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
0.6
95 10044
I F - Forward Current ( mA )
0.8
95 10027
Figure 3. Forward Current vs. Pulse Length
10
Red
1
0.1
0.01
0.1
0
2
4
6
8
Figure 5. Forward Current vs. Forward Voltage
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1
10
V F - Forward Voltage ( V )
95 10026
4
1.2
100
10
t p - Pulse Length ( ms )
95 10047
0.6
Red
0
1
0.01
I V re l - Relative Luminous Intensity
IF - Forward Current ( mA )
Tamb ≤ı 65 ° C
1.6
95 10029
10
100
I F - Forward Current ( mA )
Figure 8. Relative Luminous Intensity vs. Forward Current
Document Number 83009
Rev. 1.5, 31-Aug-04
TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
2.4
Red
I V re l - Relative Luminous Intensity
I V re l - Relative Luminous Intensity
1.2
1.0
0.8
0.6
0.4
0.2
0
590
1.6
1.2
0.8
0.4
0
610
630
650
670
690
λ -ı Wavelength ( nm )
95 10040
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
95 10259
Figure 9. Relative Intensity vs. Wavelength
Soft Orange
10
1
tp /T
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I v rel - Relative Luminous Intensity
100
I F - Forward Current ( mA )
Soft Orange
2.0
10
Soft Orange
1
0.1
0.1
0
1
2
3
4
0.01
5
1
V F - Forward Voltage ( V )
95 9990
10
I F - Forward Current ( mA )
95 9997
Figure 10. Forward Current vs. Forward Voltage
Figure 13. Relative Luminous Intensity vs. Forward Current
1.2
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
2.0
Soft Orange
1.6
1.2
0.8
0.4
Soft Orange
1.0
0.8
0.6
0.4
0.2
0
570
0
0
95 9994
100
20
40
60
80
100
Tamb - Ambient Temperature (° C )
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83009
Rev. 1.5, 31-Aug-04
95 10324
590
610
630
650
670
λ - Wavelength ( nm )
Figure 14. Relative Intensity vs. Wavelength
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TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
I v rel - Relative Luminous Intensity
I F - Forward Current ( mA )
1000
Yellow
100
t p /T = 0.001
t p = 10 µs
10
1
0.1
0
2
4
6
8
0.4
I F = 10 mA
20
40
60
80
Yellow
1.0
0.8
0.6
0.4
0.2
2.0
I F - Forward Current ( mA )
I v rel - Relative Luminous Intensity
610
630
650
λ - Wavelength
( nm )
1000
Yellow
1.6
1.2
0.8
0.4
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
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590
Figure 19. Relative Intensity vs. Wavelength
2.4
95 10260
570
95 10039
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
0
100
I F - Forward Current ( mA )
0
550
100
Tamb - Ambient Temperature ( °C )
95 10031
10
Figure 18. Relative Luminous Intensity vs. Forward Current
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
0.8
0
0.1
1.2
Yellow
1.2
0
1
95 10033
Figure 15. Forward Current vs. Forward Voltage
1.6
Yellow
0.01
1
10
V F - Forward Voltage ( V )
95 10030
10
Green
100
t p /T = 0.001
t p = 10 µs
10
1
0.1
0
95 10034
2
4
6
8
10
V F - Forward Voltage ( V )
Figure 20. Forward Current vs. Forward Voltage
Document Number 83009
Rev. 1.5, 31-Aug-04
TLHG / O / P / R / Y4900
VISHAY
1.6
1.2
Green
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
Vishay Semiconductors
1.2
0.8
0.4
0
I F = 10 mA
0
20
40
60
80
0.8
0.6
0.4
0.2
0
520
100
T amb - Ambient Temperature ( ° C )
95 10035
Green
1.0
I F – Forward Current ( mA )
I v rel - Specific Luminous Intensity
620
Pure Green
1.6
1.2
0.8
0.4
10
1
20
0.5
50
0.2
100
0.1
200
0.05
500 IF(mA)
0.02 tp/T
10
1
0.1
0
1
2
3
4
5
V F – Forward Voltage ( V )
95 9988
Figure 25. Forward Current vs. Forward Voltage
Figure 22. Specific Luminous Intensity vs. Forward Current
2.0
10
I Vrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
600
100
Green
2.0
Green
1
0.1
Pure Green
1.6
1.2
0.8
0.4
0
1
95 10037
580
Figure 24. Relative Intensity vs. Wavelength
2.4
95 10263
560
λ - Wavelength
( nm )
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
0
540
95 10038
10
100
I F - Forward Current ( mA )
Figure 23. Relative Luminous Intensity vs. Forward Current
Document Number 83009
Rev. 1.5, 31-Aug-04
95 9991
0
20
40
60
80
100
Tamb − Ambient Temperature ( °C )
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
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TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
2.4
I Spec - Specific Luninous Flux
Pure Green
2.0
1.6
1.2
0.8
0.4
0
10
100
95 10261
1000
I F - Forward Current ( mA )
Figure 27. Specific Luminous Intensity vs. Forward Current
I Vrel - Relative Luminous Intensity
10
Pure Green
1
0.1
0.01
1
10
100
I F - Forward Current ( mA )
95 9998
Figure 28. Relative Luminous Intensity vs. Forward Current
I Vrel - Relative Luminous Intensity
1.2
Pure Green
1.0
0.8
0.6
0.4
0.2
0
500
520
540
560
580
600
λ - Wavelength ( nm )
95 10325
Figure 29. Relative Intensity vs. Wavelength
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Document Number 83009
Rev. 1.5, 31-Aug-04
VISHAY
TLHG / O / P / R / Y4900
Vishay Semiconductors
Package Dimensions in mm
95 10914
Document Number 83009
Rev. 1.5, 31-Aug-04
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TLHG / O / P / R / Y4900
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83009
Rev. 1.5, 31-Aug-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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