TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17.5 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC θ JC 10 OC/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER NONE TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 40 mA 26 V BV CBO IC = 10 mA 45 V BV EBO IE = 10 mA 4.0 V hFE VCE = 5.0 V 10 --- Cob VCB = 28 V IC = 250 mA f = 1.0 MHz Po = 2.0 W PG VISION CARRIER = -8.0 dB VCE = 25 V IC = 410 mA Po = 2.0 W IMD3 VISION CARRIER = -8.0 dB VCE = 25 V SOUND CARRIER = -10 dB CHROMA = 16 dB 10 8.0 pF 12 dB f = 860 MHz SOUND CARRIER = -10 dB CHROMA = 16 dB IC = 410 mA -60 dBc f = 860 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.