TPV590 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters. PACKAGE STYLE 205 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 300 mA VCBO 45 V PDISS 5.3 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OCto +200 OC θ JC 33 OC/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE TC = 25 OC SYMBOL TEST CONDITIONS BV CBO IC = 1.0mA BV CER IC = 10 mA BV EBO IE = 1.0 mA hFE VCE = 5 V COB VCB = 28 V VCE = 20 V RBE = 10 Ω IC = 100 mA IC = 150 mA POUT = 0.5 W f = 860 MHz VCE = 20 V IC = 150 mA Vision = -8dB Chroma = -16dB Sound =-10 dB UNITS 45 V 45 V 3.5 V 20 --- f = 1.0 MHz PG IMD3 MINIMUM TYPICAL MAXIMUM 2.0 13 3.0 pF 14 dB Pref = 0.5 W -58 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.