MRA0610-23 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .320 2L FLG DESCRIPTION: The MRA0610-23 is designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. MAXIMUM RATINGS IC 3.5 A (CONT) VCES 50 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.0 °C/W 1= COLLECTOR CHARACTERISTICS 2= BASE NONE O TC = 25 C SYMBOL 3= EMITTER TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 150 mA 50 V BVEBO IE = 2.0 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPB ηc VCE = 28 V IC = 750 mA 10 f = 1.0 MHz Pout = 23 W f = 600 MHz & 1.0 GHz 3.0 mA 100 --- 21 pF 7.0 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1