ASI THX15C

THX15C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI THX15C is a Common
Emitter Device Designed for High
Linearity Class A/AB HF Applications.
PACKAGE STYLE .550 4L STUD
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC
10 A
VCB
110 V
PDISS
233 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
0.75 °C/W
CHARACTERISTICS
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 100 mA
BVCES
IC = 100 mA
BVCBO
MINIMUM TYPICAL MAXIMUM
UNITS
55
V
110
V
IC = 100 mA
110
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 60 V
ICEO
VCE = 30 V
hFE
VCE = 6.0 V
Cob
VCB = 50 V
Pg
IMD3
ηC
VCE = 50 V
f = 30 MHz
VBE = 0 V
VBE = 0 V
IC = 1.4 A
22.5
f = 1.0 MHz
Icq = 100 mA
Pout =150 W (PEP)
5.0
mA
5.0
mA
27.0
---
220
pF
-30
dB
dBc
%
14
37
-37
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1