TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released Description TEMD5010X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation. 20535 Features Applications • Product designed and qualified acc. AEC-Q101 for the automotive market • Large radiant sensitive area: e4 A = 7.5 mm2 • Wide angle of half sensitivity ϕ = ± 65° • High photo sensitivity for visible and near infrared radiation • Fast response times • Small junction capacitance • Plastic package • Floor life: 72 h, MSL 4, acc. J-STD-20 • Lead (Pb)-free component • Component in accordance to ELV 2000/53/EC, RoHS 2002/95/EC and WEEE 2002/96/EC • • • • Automotive sensors Infrared detectors Ambient light detectors High speed photo detectors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR 60 V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 350 K/W Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Soldering temperature Thermal resistance junction/ ambient Document Number 84679 Rev. 1.2, 07-May-07 In accordance with fig. 8 www.vishay.com 1 TEMD5010X01 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage IF = 50 mA Breakdown voltage IR = 100 µA, E = 0 Symbol Min VF V(BR) Typ. Max Unit 1 1.3 V 60 V Reverse dark current VR = 10 V, E = 0 Iro 2 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF Typ. Max Unit 30 nA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm , λ = 950 nm Ik 50 µA Temperature coefficient of Ik Ee = 1 mW/cm , λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm , λ = 950 nm, VR = 5 V 55 µA 2 2 2 45 Ira Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 900 nm λ0.5 600 to 1050 Range of spectral bandwidth nm Noise equivalent power VR = 10 V, λ = 950 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns NEP 4 x 10 W/√ Hz -14 Typical Characteristics Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) 2 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Figure 1. Reverse Dark Current vs. Ambient Temperature www.vishay.com 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Document Number 84679 Rev. 1.2, 07-May-07 TEMD5010X01 Vishay Semiconductors S ( λ)rel - Relative Spectral Sensitivity Ira - Reverse Light Current (μA) 1000 100 10 VR = 5 V λ= 950 nm 1 0.1 0.01 0.1 1 0.8 0.6 0.4 0.2 0 10 Ee - Irradiance (mW/cm 2) 12787 1.0 350 550 Figure 3. Reverse Light Current vs. Irradiance 750 1150 950 λ - Wavelength (nm) 94 8420 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° Srel - Relative Sensitivity Ira - Reverse Light Current (μA) 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° λ = 950 nm 1 0.1 1 10 0.6 100 V R - Reverse Voltage (V) 12788 0.4 0.2 0 0.2 0.4 0.6 94 8406 Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 84679 Rev. 1.2, 07-May-07 www.vishay.com 3 TEMD5010X01 Vishay Semiconductors Package Dimensions in millimeters www.vishay.com 4 Drawing-No.: 6.541-5060.01-4 Issue: 2; 26.04.07 Not indicated tolerances ± 0.1 20536 Minimum order quantity (MOQ): 1500 pcs (1 reel) Document Number 84679 Rev. 1.2, 07-May-07 TEMD5010X01 Vishay Semiconductors Taping Dimensions in millimeters 20537 Document Number 84679 Rev. 1.2, 07-May-07 www.vishay.com 5 TEMD5010X01 Vishay Semiconductors Reflow Solder Profiles Temperature (°C) Preheat 280 260 240 220 200 180 160 140 120 100 Drypack Reflow 260 °C Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Cooling 250 °C 210 °C Floor Life 145 °C 125 °C ~ 20 s 80 60 40 20 0 ~ 30 s ~ 40 s 120 s 0 30 60 90 120 150 180 210 240 270 300 Time (s) 19030 Drying Figure 8. Lead (Pb)-free (Sn) Reflow Solder Profile 948625 300 max. 240 °C 10 s ca. 230 °C 250 Temperature (°C) Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TEMD5110 is released for: Moisture Sensitivity Level 4, according to JEDEC, J-STD-020 Floor Life: 72 h Conditions: Tamb < 30 °C, RH < 60 % In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. 200 215 °C 150 max 40s max. 160 °C 100 90 s - 120 s Lead Temperature 50 full line: typical dotted: process limits 2 K/s - 4 K/s 0 0 50 100 150 200 250 Time (s) Figure 9. Lead Tin (SnPb) Reflow Solder Profile www.vishay.com 6 Document Number 84679 Rev. 1.2, 07-May-07 TEMD5010X01 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 84679 Rev. 1.2, 07-May-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1