VISHAY TEMD1030

TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Silicon PIN Photodiode
Description
TEMD1000
TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens.
Due to integrated Daylight filter devices are sensitive
for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of ± 15°.
TEMD1020
TEMD1030
TEMD1040
Features
• Extra fast response times
• Radiant sensitive area A = 0.25 mm2
• Daylight filter
• Versatile terminal configurations
• Package matched to IR Emitter series
TSMF1000 and TSML1000
• Angle of half sensitivity ϕ = ± 15°
18029
Applications
High speed detector for SMT
IR Detector for Daylight application
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Tamb ≤ 25 °C
Power Dissipation
Junction Temperature
Symbol
Value
VR
60
Unit
V
PV
75
mW
Tj
100
°C
Storage Temperature Range
Tstg
- 40 to + 100
°C
Operating Temperature Range
Tstg
- 40 to + 85
°C
Tsd
<260
°C
t≤5s
Soldering Temperature
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Typ.
Max
Unit
1.0
1.3
V
Iro
1
10
nA
CD
1.8
pF
Ee = 1 mW/cm ,
λ = 870 nm, VR = 5 V
Ira
10
µA
Ee = 1 mW/cm2,
λ = 950 nm, VR = 5 V
Ira
12
µA
Temp. Coefficient of Ira
VR = 5 V, λ = 870 nm
TKIra
0.2
%/K
Absolute Spectral Sensitivity
VR = 5 V, λ = 870 nm
s(λ)
0.60
A/W
VR = 5 V, λ = 950 nm
s(λ)
0.55
A/W
Angle of Half Sensitivity
ϕ
±15
deg
Wavelength of Peak Sensitivity
λp
900
nm
Forward Voltage
IF = 50 mA
Breakdown Voltage
IR = 100 µA, E = 0
Reverse Dark Current
VR = 10 V, E = 0
Diode Capacitance
VR = 5 V, f = 1 MHz, E = 0
Reverse Light Current
Document Number 81564
Rev. 9, 21-May-03
Symbol
Min
VF
2
V(BR)
60
5
V
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TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Parameter
Test condition
Range of Spectral Bandwidth
Symbol
Min
Typ.
Max
Unit
λ0.5
840 to 1050
nm
Rise Time
VR = 10 V, RL = 50 Ω,
λ = 820 nm
tr
4
ns
Fall Time
VR = 10 V, RL = 50 Ω,
λ = 820 nm
tf
4
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100
Ira - Reverse Light Current ( µ A )
I ro - Reverse Dark Current ( nA )
1000
100
10
V R = 10 V
1
20
40
60
Tamb - Ambient Temperature ( ° C )
94 8427
mW/cm 2 )
8
C D - Diode Capacitance ( pF )
I ra rel - Relative Reverse Light Current
10
1
Figure 3. Reverse Light Current vs. Irradiance
1.4
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
6
E=0
f = 1 MHz
4
2
0
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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2
0.1
E e - Irradiance (
16055
Figure 1. Reverse Dark Current vs. Ambient Temperature
94 8416
V =5V
λ = 950 nm
1.0
0.1
0.01
100
80
10
0.1
94 8430
1
100
10
V R - Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 81564
Rev. 9, 21-May-03
TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
S ( λ ) rel - Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1150
1050
λ - Wavelength ( nm )
12786
Figure 5. Relative Spectral Sensitivity vs. Wavelength
Srel - Relative Sensitivity
0°
10°
20 °
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8248
Figure 6. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81564
Rev. 9, 21-May-03
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TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Package Dimensions in mm
TEMD1000
16159
Package Dimensions in mm
TEMD1020
16160
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Document Number 81564
Rev. 9, 21-May-03
VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Package Dimensions in mm
TEMD1030
16228
Package Dimensions in mm
TEMD1040
16760
Document Number 81564
Rev. 9, 21-May-03
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TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Reel Dimensions
18033
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Document Number 81564
Rev. 9, 21-May-03
VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Taping TEMD1000
18030
Taping TEMD1020
18031
Document Number 81564
Rev. 9, 21-May-03
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TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Taping TEMD1030
18032
1. Over-current-proof
Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change
(Burn out will happen).
2. Storage
2.1 Storage temperature and rel. humidity conditions
are: 5°C to 35°C, R.H. 60%
2.2 Floor life must not exceed 168 h, acc. to JEDEC
level 3, J-STD-020.
Once the package is opened, the products should be
used within a week. Otherwise, they should be kept in
a damp proof box with desiccant.
Considering tape life, we suggest to use products
within one year from production date.
2.3 If opened more than one week in an atmosphere
5°C to 35°C, R.H. 60%, devices should be treated at
60°C ± 5°C for 15 hrs.
2.4 If humidity indicator in the package shows pink
color (normal blue), then devices should be treated
with the same conditions as 2.3
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Reflow Solder Profile
260
240
220
Temperature ( q C )
Precautions For Use
200
+ 5 qC/s
– 5 qC/s
180
160
140
120
60 s to 120 s
5s
100
80
60
0
17172
20 40 60 80 100 120 140 160 180 200 220
Time ( s )
Document Number 81564
Rev. 9, 21-May-03
TEMD1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81564
Rev. 9, 21-May-03
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