VISHAY BPV23F

BPV23F(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV23F(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the lens package
achieves a sensitivity improvement of 80 %.
Features
94 8633
Applications
mm2)
•
•
•
•
•
•
•
•
Large radiant sensitive area (A = 5.7
Wide viewing angle ϕ = ± 60 °
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with IR filter
Filter designed for 950 nm transmission
Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation
Tamb ≤ 25 °C
Junction Temperature
Symbol
Value
VR
60
Unit
V
PV
215
mW
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Soldering Temperature
Thermal Resistance Junction/
Ambient
Document Number 81510
Rev. 1.4, 08-Mar-05
t≤5s
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BPV23F(L)
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 50 mA
Breakdown Voltage
IR = 100 µA, E = 0
Symbol
Min
VF
V(BR)
Typ.
Max
Unit
1
1.3
V
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
48
pF
Serial Resistance
VR = 12 V, f = 1 MHz
RS
900
Ω
30
nA
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Open Circuit Voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
390
mV
Temp. Coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short Circuit Current
Ee = 1 mW/cm , λ = 950 nm
Ik
60
µA
Reverse Light Current
Ee = 1 mW/cm , λ = 950 nm,
VR = 5 V
Ira
63
µA
Temp. Coefficient of Ira
Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
TKIra
0.2
%/K
Absolute Spectral Sensitivity
VR = 5 V, λ = 870 nm
s(λ)
0.35
A/W
VR = 5 V, λ = 950 nm
s(λ)
0.6
A/W
Angle of Half Sensitivity
ϕ
± 60
deg
Wavelength of Peak Sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
2
2
Range of Spectral Bandwidth
45
Quantum Efficiency
λ = 950 nm
η
90
%
Noise Equivalent Power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
Detectivity
VR = 10 V, λ = 950 nm
D*
5 x 1012
cm√Hz/W
ns
Rise Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
70
Fall Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
70
ns
Cut-Off Frequency
VR = 12 V, RL = 1 kΩ, λ = 870 nm
fc
4
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
fc
1
MHz
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Document Number 81510
Rev. 1.4, 08-Mar-05
BPV23F(L)
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100
Ira – Reverse Light Current (µA)
I ro - Reverse Dark Current ( nA )
1000
100
10
V R = 10 V
20
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
0.02 mW/cm2
40
60
100
80
Tamb - Ambient Temperature ( ° C )
0.1
CD – Diode Capacitance ( pF )
80
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
E=0
f=1MHz
60
40
20
0
20
40
60
80
100
Tamb - Ambient Temperature ( ° C )
94 8409
100
10
Figure 4. Reverse Light Current vs. Reverse Voltage
1.4
0.6
0
1
V R – Reverse Voltage ( V )
94 8425
Figure 1. Reverse Dark Current vs. Ambient Temperature
I ra rel - Relative Reverse Light Current
λ = 950 nm
1
94 8403
0.1
S ( l ) rel – Relative Spectral Sensitivity
10
1
VR = 5 V
λ = 950 nm
0.1
0.01
0.1
Ee – Irradiance (
1
Figure 3. Reverse Light Current vs. Irradiance
Document Number 81510
Rev. 1.4, 08-Mar-05
1.2
1.0
0.8
0.6
0.4
0.2
0
750
10
mW/cm2 )
100
10
Figure 5. Diode Capacitance vs. Reverse Voltage
1000
100
1
V R – Reverse Voltage ( V )
94 8423
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Ira – Reverse Light Current (µA)
0.5 mW/cm 2
1
94 8424
1 mW/cm 2
94 8408
850
950
1050
1150
l – Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
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BPV23F(L)
Vishay Semiconductors
0°
10 °
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
20 °
S rel - Relative Sensitivity
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8413
Package Dimensions in mm
9612205
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Document Number 81510
Rev. 1.4, 08-Mar-05
BPV23F(L)
Vishay Semiconductors
Package Dimensions in mm
95 11475
Document Number 81510
Rev. 1.4, 08-Mar-05
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BPV23F(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81510
Rev. 1.4, 08-Mar-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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