JMnic Product Specification 2SC2579 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High power dissipation ・High current capability APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 6 V 8 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC2579 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 160 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 160 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ; IC=0 6 V ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V Transition frequency IC=0.5A ; VCE=10V VCE(sat) fT 2 50 20 MHz JMnic Product Specification 2SC2579 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3