Inchange Semiconductor Product Specification 2SC2578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High power dissipation ・High current capability APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO INC EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 140 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 6 V 7 A 70 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2578 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 140 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 6 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V Collector-emitter saturation voltage IC=3A ; IB=0.3A VCE(sat) fT 体 导 半 固电 Transition frequency IC=0.5A ; VCE=10V 2 TOR C U D ON C I M E SE G N A CH IN 50 20 2 V MHz Inchange Semiconductor Product Specification 2SC2578 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3