JMNIC 2SA1146

JMnic
Product Specification
2SA1146
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3P(I) package
・High power dissipations
APPLICATIONS
・For audio and general purpose
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-2
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1146
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-140
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-4A ; VCE=-5V
35
Transition frequency
IC=-0.5A ; VCE=-10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
160
70
MHz
JMnic
Product Specification
2SA1146
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3