JMNIC 2SA1184

JMnic
Product Specification
2SA1184
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・High breakdown voltage
APPLICATIONS
・Audio frequency power amplifier
・High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
-1
A
-0.1
A
IC
Collector current
IB
Base current
PD
Total power dissipation
Ta=25℃
1.5
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
JMnic
Product Specification
2SA1184
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
μA
hFE
DC current gain
IC=-100mA ; VCE=-5V
Transition frequency
IC=-0.1A ; VCE=5V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
80
MAX
UNIT
240
120
MHz
JMnic
Product Specification
2SA1184
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3