ISC 2SD627

Inchange Semiconductor
Product Specification
2SD627
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·For use in horizontal deflection output
stages for color TV receivers
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3
A
ICM
Collector current-peak
6
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD627
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.6A
10
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.6A
1.6
V
ICBO
Collector cut-off current
VCB=1000V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=10V
Fall time
ICP=2.5A
tf
CONDITIONS
2
MIN
TYP.
MAX
600
5
UNIT
V
25
1.0
μs
Inchange Semiconductor
Product Specification
2SD627
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3