Inchange Semiconductor Product Specification 2SD1885 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High reliability ・High speed APPLICATIONS ・Color TV horizontal deflection output. ・Color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 20 A PC Collector power dissipation 3.0 W TC=25℃ 60 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1885 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A;IB=1 A 5 V Base-emitter saturation voltage IC=5A;IB=1 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO Emitter cut-off current VEB=4V; IC=0 1 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 5 Fall time IC=4A;RL=50Ω; IB1=0.8A IB2=-1.6AVCC=200V VCEO(SUS) tf CONDITIONS 2 MIN TYP. 800 V 10 0.1 0.3 μs Inchange Semiconductor Product Specification 2SD1885 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1885 Silicon NPN Power Transistors 4