ISC 2SD1885

Inchange Semiconductor
Product Specification
2SD1885
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High breakdown voltage
・High reliability
・High speed
APPLICATIONS
・Color TV horizontal deflection output.
・Color display horizontal deflection output.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
20
A
PC
Collector power dissipation
3.0
W
TC=25℃
60
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1885
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=5A;IB=1 A
5
V
Base-emitter saturation voltage
IC=5A;IB=1 A
1.5
V
Collector-emitter sustaining voltage
IC=100mA;IB=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
5
Fall time
IC=4A;RL=50Ω; IB1=0.8A
IB2=-1.6AVCC=200V
VCEO(SUS)
tf
CONDITIONS
2
MIN
TYP.
800
V
10
0.1
0.3
μs
Inchange Semiconductor
Product Specification
2SD1885
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SD1885
Silicon NPN Power Transistors
4