Inchange Semiconductor Product Specification 2SD2579 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability APPLICATIONS ・Color TV horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 20 A PC Collector power dissipation TC=25℃ 60 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ 1 Inchange Semiconductor Product Specification 2SD2579 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 5 8 hFE-2 DC current gain IC=1A ; VCE=5V 20 35 Fall time IC=4A;RL=50Ω IB1=0.8A;-IB2=1.6A;VCC=200V tf CONDITIONS 2 MIN TYP. MAX 800 UNIT V 0.3 μs Inchange Semiconductor Product Specification 2SD2579 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD2579 Silicon NPN Power Transistors 4