NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−963 package which is designed for low power surface mount applications. Features • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−963 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com (3) (2) R1 Q1 (1) R2 Q2 R2 (4) R1 (5) (6) MARKING DIAGRAM XM SOT−963 CASE 527AD X M G 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSBA114EDP6T5G SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 5 1 Publication Order Number: NSBA114EDP6/D NSBA114EDP6T5G Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 231 1.9 mW mW/°C SINGLE HEATED PD Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C 540 PD Thermal Resistance (Note 2) Junction-to-Ambient °C/W 269 2.2 mW mW/°C 464 °C/W 339 2.7 mW mW/°C 369 °C/W 408 3.3 mW mW/°C RqJA 306 °C/W TJ, Tstg −55 to +150 °C RqJA DUAL HEATED (Note 3) PD Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Thermal Resistance (Note 2) Junction-to-Ambient Junction and Storage Temperature 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device Marking* R1 (k) R2 (k) NSBA114EDP6T5G F (180°) 10 10 NSBA124EDP6T5G E (90°) 22 22 NSBA144EDP6T5G E (270°) 47 47 NSBA114YDP6T5G Q (0°) 10 47 NSBA123TDP6T5G L (90°) 2.2 ∝ NSBA143EDP6T5G F (90°) 4.7 4.7 NSBA143ZDP6T5G K (90°) 4.7 47 NSBA123JDP6T5G P (90°) 2.2 47 NSBA144WDP6T5G J (90°) 47 22 NSBA114TDP6T5G T (180°) 10 ∝ NSBA115TDP6T5G V (180°) 100 ∝ Package Shipping† SOT−963 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBA114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit nAdc OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 4.0 0.9 1.5 0.1 0.18 0.2 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 15 80 80 80 160 60 100 140 140 350 27 140 140 140 250 − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA114TDP6T5G NSBA143EDP6T5G NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA115TDP6T5G/NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA114TDP6T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G NSBA114YDP6T5G/NSBA123TDP6T5G NSBA123JDP6T5G/NSBA144EDP6T5G (IC = 10 mA, IB = 1 mA) NSBA143ZDP6T5G/NSBA143EDP6T5G/NSBA114TDP6T5G (IC = 10 mA, IB = 5 mA) NSBA115TPD6T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) VOL NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144EDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G VOH Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G NSBA114YDP6T5G/NSBA143ZDP6T5G/NSBA123JDP6T5G NSBA144WDP6T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBA123TDP6T5G/NSBA143EDP6T5G/ NSBA114TDP6T5G/NSBA115TDP6T5G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc Vdc NSBA114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor Resistor Ratio Symbol Min Typ Max Unit R1 7.0 7.0 15.4 32.9 7.0 1.5 3.3 3.3 1.54 32.9 70 10 10 22 47 10 2.2 4.7 4.7 2.2 47 100 13 13 28.6 61.1 13 2.9 6.1 6.1 2.86 61.1 130 kW 0.8 0.17 − 1.0 0.21 − 1.2 0.25 − 0.055 0.038 1.7 0.1 0.047 2.1 0.185 0.056 2.6 NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G NSBA114EDP6T5G/NSBA124EDP6T5G NSBA144EDP6T5G/NSBA143EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G/NSBA114TDP6T5G/ NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G R1/R2 http://onsemi.com 4 NSBA114EDP6T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EDP6T5G TA = 25°C TA = 150°C 0.10 TA = −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 100 150°C 25°C −55°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) vs. IC Figure 2. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 30 35 40 45 50 10 150°C 1.0 −55°C 0.1 25°C 0.01 0 1 REVERSE BIAS VOLTAGE (V) 2 25°C −55°C 1.0 150°C 0 5 10 4 Figure 4. Output Current vs. Input Voltage 10 0.1 3 Vin, INPUT VOLTAGE (V) Figure 3. Output Capacitance Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 2.4 0.8 100 15 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 5. Input Voltage vs. Output Current http://onsemi.com 5 50 5 NSBA114EDP6T5G Series PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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