NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB4904DW1T1G and NSB4904DW1T2G, two complementary BRT devices are housed in the SC−88/SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. 5 R1 R2 Q1 Q2 R2 1 R1 2 3 1 Features • • • • 4 Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for SC−88/SOT−363 CASE 419B STYLE 1 MARKING DIAGRAM 6 Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RC MG G 1 RC = Device Marking M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See specific ordering information in the ordering information table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 2 1 Publication Order Number: NSB4904DW1T1G/D NSB4904DW1T1G, NSB4904DW1T2G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/°C RqJA 670 (Note 1) 490 (Note 2) °C/W Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW mW/°C Thermal Resistance − Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance − Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. http://onsemi.com 2 NSB4904DW1T1G, NSB4904DW1T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nA Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nA Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.1 mA Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − V Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − V OFF CHARACTERISTICS ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 80 140 − VCE(sat) − − 0.25 V Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL − − 0.2 V Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − V Input Resistor R1 32.9 47 61.1 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. PD, POWER DISSIPATION (mW) 300 250 200 150 100 RqJA = 490°C/W 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve ORDERING INFORMATION AND RESISTOR VALUES R1 (K) R2 (K) Package Shipping† NSB4904DW1T1G 47 47 SOT−363 (Pb−Free) 3000/Tape & Reel NSB4904DW1T2G 47 47 SOT−363 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 3 NSB4904DW1T1G, NSB4904DW1T2G 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G NPN TRANSISTOR 1 25°C TA=-25°C 75°C 0.1 VCE = 10 V TA=75°C 25°C -25°C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25°C 75°C 0.6 TA=-25°C 10 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 4 50 10 NSB4904DW1T1G, NSB4904DW1T2G 1 1000 IC/IB = 10 TA=-25°C h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G PNP TRANSISTOR 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25°C 1 0.1 0.01 Figure 9. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 NSB4904DW1T1G, NSB4904DW1T2G PACKAGE DIMENSIONS SC−88/SOT−363/SC70−6 CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 STYLE 1: PIN 1. 2. 3. 4. 5. 6. C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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