NSBC114EF3T5G Series Preferred Devices Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−1123 package which is designed for low power surface mount applications. Features • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−1123 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices http://onsemi.com NPN SILICON DIGITAL TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 1 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 2 SOT−1123 CASE 524AA STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. xM x M G or G = Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package NSBC114EF3T5G SOT−1123 (Pb−Free) Shipping† 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 3 1 Publication Order Number: NSBC114EF3/D NSBC114EF3T5G Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Max Unit 254 2.0 mW mW/°C 493 °C/W 297 2.4 mW mW/°C Thermal Resistance Junction-to-Ambient (Note 2) RqJA 421 °C/W Thermal Resistance Junction−to−Lead 3 (Note 1) RqJL 193 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1. FR−4 @ 100 2. FR−4 @ 500 mm2, mm2, 1 oz. copper traces, still air. 1 oz. copper traces, still air. DEVICE MARKING AND RESISTOR VALUES Device Marking* R1 (k) R2 (k) A (0°) 10 10 NSBC124EF3T5G L (0°) 22 22 NSBC144EF3T5G D (0°) 47 47 NSBC114YF3T5G J (0°) 10 47 NSBC123TF3T5G T (0°) 2.2 ∞ NSBC143EF3T5G P (0°) 4.7 4.7 NSBC143ZF3T5G R (0°) 4.7 47 NSBC123JF3T5G V (0°) 2.2 47 NSBC144WF3T5G Q (0°) 47 22 NSBC114TF3T5G K (90°) 10 ∞ NSBC115TF3T5G P (90°) 100 ∞ NSBC114EF3T5G Package Shipping† SOT−1123 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBC114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 4.0 0.1 1.5 0.18 0.2 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 15 80 80 80 60 100 140 140 350 30 200 140 140 − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS NSBC114EF3T5G NSBC124EF3T5G NSBC144EF3T5G NSBC114YF3T5G NSBC114TF3T5G NSBC123TF3T5G NSBC115TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EF3T5G NSBC124EF3T5G NSBC144EF3T5G NSBC114YF3T5G NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) NSBC114EF3T5G/NSBC124EF3T5G/NSBC144EF3T5G NSBC114YF3T5G/NSBC144WF3T5G/NSBC123JF3T5G (IC = 10 mA, IB = 1 mA) NSBC143EF3T5G/NSBC143ZF3T5G/NSBC123TF3T5G/ NSBC114TF3T5G (IC = 10 mA, IB = 5 mA) NSBC115TF3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) NSBC114TF3T5G NSBC114EF3T5G NSBC124EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144EF3T5G NSBC144WF3T5G NSBC115TF3T5G VOL 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc NSBC114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 7.0 15.4 32.9 7.0 1.5 3.3 3.3 1.54 32.9 70 10 10 22 47 10 2.2 4.7 4.7 2.2 47 100 13 13 28.6 61.1 13 2.9 6.1 6.1 2.86 61.1 130 kW 0.8 1.0 1.2 0.17 − 0.055 0.038 1.7 0.21 − 0.1 0.047 2.1 0.25 − 0.185 0.056 2.6 ON CHARACTERISTICS (Note 4) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBC114EF3T5G/NSBC124EF3T5G/NSBC144EF3T5G NSBC144YF3T5G/NSBC143EF3T5G/NSBC123JF3T5G NSBC144WF3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC123TF3T5G/NSBC143ZF3T5G/NSBC114TF3T5G/ NSBC115TF3T5G Input Resistor NSBC114TF3T5G NSBC114EF3T5G NSBC124EF3T5G NSBC144EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G NSBC115TF3T5G Resistor Ratio NSBC114EF3T5G/NSBC124EF3T5G/ NSBC144EF3T5G/NSBC123EF3T5G NSBC114YF3T5G NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 4 NSBC114EF3T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V TA = 25°C hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EF3T5G TA = 150°C 0.10 TA = −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 25°C 100 150°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0 5 10 15 20 25 30 35 40 VCB, COLLECTOR BASE VOLTAGE (V) 45 50 150°C 10 1 −55°C 0.1 25°C 0.01 0.5 Figure 3. Output Capacitance 1 1.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) −55°C 25°C 1.0 150°C 0.10 0 5 10 15 4 4.5 Figure 4. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 100 Figure 2. DC Current Gain 2.40 0.80 −55°C 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 5. Input Voltage vs. Output Current http://onsemi.com 5 50 5 NSBC114EF3T5G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 7. Open Collector Inverter: Inverts the Input Signal Figure 8. Inexpensive, Unregulated Current Source http://onsemi.com 6 NSBC114EF3T5G Series PACKAGE DIMENSIONS SOT−1123 CASE 524AA−01 ISSUE B −X− D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− 1 E 3 2 b e 0.08 (0.0032) X Y DIM A b b1 c D E e HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.22 0.28 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 −−− 0.40 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.004 0.003 0.030 0.022 0.014 0.037 0.002 INCHES NOM 0.015 0.009 0.006 0.005 0.031 0.024 −−−− 0.039 0.004 MAX 0.016 0.011 0.008 0.007 0.033 0.026 0.016 0.041 0.006 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.35 0.30 0.25 0.40 0.90 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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