TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC6110 Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V DC (Note 1) ID −4.5 Pulse (Note 1) IDP −18 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W TOSHIBA Single pulse avalanche energy (Note 3) EAS 3.4 mJ Weight: 0.011 g (typ.) Avalanche current IAR −2.3 A EAR 0.025 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Repetitive avalanche energy (Note 4) A JEDEC ― JEITA ― 2-3T1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. 6 5 4 1 2 3 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-07-17 TPC6110 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ± 20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 10 V −21 ⎯ ⎯ VDS = −10 V, ID = −0.1 mA −0.8 ⎯ −2.0 VGS = −4.5 V, ID = −2.2 A ⎯ 59 77 VGS = −10 V, ID = −2.2 A ⎯ 43 56 VDS = −10 V, ID = −2.2 A 4.2 8.4 ⎯ ⎯ 510 ⎯ ⎯ 85 ⎯ ⎯ 110 ⎯ ⎯ 6 ⎯ ⎯ 12 ⎯ ⎯ 21 ⎯ ⎯ 70 ⎯ ⎯ 14 ⎯ ⎯ 1.6 ⎯ ⎯ 3.8 ⎯ Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −2.2 A VOUT 4.7 Ω Switching time Fall time (Note 7) RL = 6.8 Ω Drain-source breakdown voltage VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — −18 A VDSF IDR = −4.5 A, VGS = 0 V — — 1.2 V Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 2 2009-07-17 TPC6110 Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. S3K Product-specific code Lot code (year) Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.3 A Note 4: Repetitive rating : pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. Note 6: A dot marking for identifying the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3 2009-07-17 TPC6110 ID – VDS −10 −4 −3.5 Common source Ta = 25°C Pulse Test −5 −6 (A) −2.8 ID −8 −2.6 −2 −2.4 −1 −0.2 0 −0.4 −0.6 Drain-source voltage Common source Ta = 25°C Pulse Test −2.8 −6 −2.6 −4 −2.4 VGS = −2.2 V −0.8 VDS 0 0 −1.0 (V) −1 −2 −4 VDS −5 (V) VDS – VGS −1 (V) Common source VDS = −10 V Pulse Test −8 −3 Drain-source voltage ID – VGS −10 Common source Ta = 25°C Pulse Test −0.8 VDS 100 Ta = −55°C 25 −6 Drain-source voltage ID (A) −3 −4.5 −2 VGS = −2.2 V Drain current −3.5 −4 −3 0 −10 −8 Drain current ID −3 −4.5 −4 Drain current ID – VDS −10 (A) −5 −4 −2 −0.6 −0.4 ID = −4.5 A −0.2 −2.2 −1.1 0 0 −1 0 −2 −3 Gate-source voltage −4 VGS −5 0 (V) −4 −6 Gate-source voltage |Yfs| – ID −8 VGS −10 (V) RDS (ON) – ID 100 1000 Common source VDS = −10 V Pulse Test Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) −2 Ta = −55°C 10 100 25 1 0.1 −0. 1 −1 −10 Common source Ta = 25°C Pulse Test 100 −10 10 1 −0.1 −100 Drain current ID (A) VGS = −4.5 V −1 −10 −100 Drain current ID (A) 4 2009-07-17 TPC6110 RDS (ON) − Ta IDR − VDS −100 Common source Pulse Test ID = −1.1, −2.2, −4.5 A VGS = −4.5 V ID = −1.1, −2.2, −4.5 A 30 VGS = −10 V 0 −80 −40 0 40 80 120 −10 −3 −1 0.4 0 Ambient temperature Ta (°C) 0.8 −1.6 Gate threshold voltage Vth (V) (pF) Capacitance C Ciss Coss Crss −1 −10 Drain-source voltage −1.2 −0.8 0 −80 −100 VDS (V) −40 0 1.0 (2) t = 5s 0.5 40 80 120 160 120 −30 Common source ID = −4.5 A Ta = 25°C −25 Pulse Test (V) −30 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.5 0 0 80 Dynamic input / output characteristics −25 VDS = −24 V −20 Drain-source voltage Drain power dissipation PD (W) 2.0 40 Ambient temperature Ta (°C) VDS (1) t = 5s Common source VGS = −10 V ID = −0.1 mA Pulse Test Common source −0.4 VDS = −10 V ID = −0.1mA Pulse test PD − Ta 2.5 (V) Vth − Ta 1000 10 −0.1 VDS 1.6 −2.0 Common source VGS = 0 V f = 1 MHz Ta = 25°C 100 1.2 Drain-source voltage Capacitance – VDS 10000 VGS = 0 V −1 −0.1 160 −4.5 −10 −20 −15 Ambient temperature Ta (°C) −12 −10 −10 −6 VDD = −24 V −6 −5 −5 0 0 160 −15 VGS −12 4 8 12 16 20 VGS (V) 60 Common source Ta = 25°C Pulse Test Gate-source voltage 90 Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) ( μΩ) 120 0 Total gate charge Qg (nC) 5 2009-07-17 TPC6110 rth − tw 1000 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (b) (Note 2b) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 SINGLE PULSE 0.1 1m 10m 100m 1 Pulse width 10 100 1000 tw (s) Safe Operating Area −100 Drain current ID (A) ID max (pulse) * 1 ms * −10 10 ms * −1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. −0.1 −0.1 VDSS max −1 Drain-source voltage −10 VDS −100 (V) 6 2009-07-17 TPC6110 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-07-17