TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm 1.27 0.4 ± 0.1 8 0.95 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V (Note 1) ID −24 Pulsed (Note 1) IDP −72 PD 30 W PD 2.8 W PD 1.6 W EAS 75 mJ Avalanche current IAR −24 A TOSHIBA Channel temperature Tch 150 °C Weight: 0.076 g (typ.) Storage temperature range Tstg −55 to 150 °C Drain current DC Drain power dissipation Drain power dissipation (Tc=25°C) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) 0.595 5.0 ± 0.2 0.05 S S 4 1 0.6 ± 0.1 Characteristics 4 1 0.166 ± 0.05 Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) 4.25 ± 0.2 A Note: For Notes 1 to 3, refer to the next page. A 1.1 ± 0.2 Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • 3.5 ± 0.2 • 0.15 ± 0.05 8 5 0.8 ± 0.1 Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) 5.0 ± 0.2 Small footprint due to small and thin package • 6.0 ± 0.3 • 0.05 M A 5 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― 2-5Q1A Circuit Configuration Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 8 7 6 5 1 2 3 4 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2009-12-03 TPCA8109 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25°C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 4.17 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 4) TPCA 8109 Type Lot No. * Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 100μH, RG = 25 Ω, IAR = -24 A Note 4: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2009-12-03 TPCA8109 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 10 V (Note5) −21 ⎯ ⎯ VDS = −10 V, ID = − 0.5 mA −0.8 ⎯ −2.0 VGS = −4.5V, ID = −12 A ⎯ 10 13 VGS = −10 V, ID = −12 A ⎯ 7 9 ⎯ 2400 ⎯ ⎯ 400 ⎯ ⎯ 460 ⎯ ⎯ 9.2 ⎯ ⎯ 16 ⎯ ⎯ 58 ⎯ ⎯ 172 ⎯ ⎯ 56 ⎯ ⎯ 5.6 ⎯ ⎯ 15 ⎯ Vth Drain-source ON resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V Switching time Fall time ID = −12 A VOUT RL = 1.25 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage tf V V mΩ pF ns VDD ≈ −15 V Turn-off time toff Total gate charge (gate-source plus gate-drain) Duty ≤ 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −24 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −72 A ⎯ ⎯ 1.2 V VDSF IDR = −24 A, VGS = 0 V Note 5: V(BR)DSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. 3 2009-12-03 TPCA8109 ID – VDS −10 −6 −4.5 −10 −2.6 −3 ID – VDS −8 (A) ID −6 −10 −3.6 −3.2 −6 −2.3 (A) −2.2 Drain current ID Drain current −50 Common source −2.4 Ta = 25°C Pulse test −4 −2.1 −2 −40 −3 Common source Ta = 25°C Pulse test −4.5 −2.8 −30 −2.6 −20 −2.4 −10 −2 −2.2 VGS = −1.9 V 0 0 −0.2 −0.4 −0.6 −0.8 Drain−source voltage VDS 0 0 −1 (V) −0.4 −20 VDS (V) 25 Ta = −55°C 100 −10 0 0 −1 (V) VDS – VGS Drain−source voltage Drain current (A) ID −30 VDS −0.5 Common source VDS = −10 V Pulse test −40 VGS = −2 V −1.6 −2 −1.2 Drain-source voltage ID – VGS −50 −0.8 −2 −3 Gate−source voltage VGS −0.4 −0.3 −0.2 (V) ID = −24 A −0.1 −12 −6 0 0 −4 Common source Ta = 25°C Pulse test −4 −8 −12 Gate−source voltage −16 VGS −20 (V) RDS (ON) – ID Drain−source ON-resistance RDS (ON) (mΩ) 100 Common source Ta = 25°C Pulse test −4.5 10 VGS = −10 V 1 −0.1 −1 Drain current −10 ID −100 (A) 4 2009-12-03 TPCA8109 RDS (ON) – Ta IDR – VDS −100 20 IDR ID = −6, −12, −24 A 12 VGS = −4.5 V 8 ID = −6, −12, −24 A VGS = −10 V 4 0 −80 −40 −10 (A) 16 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 40 80 Ambient temperature 120 Ta −1 −10 VGS = 0 V −1 Common source Ta = 25°C Pulse test −0.1 0 160 −3 −4.5 (°C) 0.2 0.4 Drain−source voltage Capacitance – VDS 0.8 VDS 1 1.2 (V) Vth – Ta −2 (pF) Vth (V) 10000 Gate threshold voltage Ciss C Capacitance 0.6 1000 Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 100 −0.1 −1 −10 Drain−source voltage −1.2 −0.8 −0.4 0 −80 −100 VDS −1.6 Common source VDS = −10 V ID = −0.5mA Pulse test −40 0 40 Ambient temperature (V) 80 Ta 120 160 (°C) VDD = −24 V VDS −20 −20 −15 −15 −6 −12 VDD = −24 V −10 −12 −6 −5 −5 0 0 −10 VGS 20 40 Total gate charge 60 Qg 80 100 VGS −25 −30 Common source ID = −24 A Ta = 25°C −25 Pulse test Gate−source voltage Drain−source voltage VDS (V) −30 (V) Dynamic input/output characteristics 0 (nC) 5 2009-12-03 TPCA8109 rth − tw Transient thermal impedance rth (°C/W) 1000 100 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ (2) (1) 10 (3) 1 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 (s) PD – Tc PD – Ta (Note 2a) (W) board(a) (1) (2)Device mounted on a glass-epoxy board(b) (Note 2b) PD 2.5 t = 10 s 2 Drain power dissipation Drain power dissipation 40 (1)Device mounted on a glass-epoxy PD (W) 3 (2) 1.5 1 0.5 0 0 40 80 Ambient temperature 1000 120 Ta 30 20 10 0 160 0 40 80 Case temperature (°C) 120 Tc 160 (°C) Safe operating area −100 ID max (Pulse) * Drain current ID (A) −1000 1 ms * t = 10 ms * −10 −1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2009-12-03 TPCA8109 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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