TOSHIBA TPC8120

TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8120
Lithium Ion Battery Applications
Power Management Switch Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.)
•
High forward transfer admittance: |Yfs| =80 S (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
•
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
−25/+20
V
(Note 1)
ID
−18
Pulse (Note 1)
IDP
−72
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
211
mJ
Avalanche current
IAR
−18
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.03
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
A
JEDEC
―
JEITA
―
TOSHIBA
Weight: 0.080 g (typ.)
Circuit Configuration
8
Note 1, Note 2, Note 3 and Note 4: See the next page.
2-6J1B
7
6
5
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
4
1
2
3
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8120
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8120
Part No.
(or abbreviation code)
Lot No.
(weekly code)
Note 6
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −18 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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TPC8120
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 10V (Note 7)
−21
⎯
⎯
VDS = −10 V, ID = −1 mA
−0.8
⎯
−2.0
VGS = −4.5 V, ID = −9 A
⎯
3.3
4.2
VGS = −10 V, ID = −9 A
⎯
2.6
3.2
VDS = −10 V, ID = −9 A
40
80
⎯
⎯
7420
⎯
⎯
1180
⎯
⎯
1440
⎯
⎯
10
⎯
⎯
18
⎯
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-ON time
ton
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
Fall time
4.7 Ω
Switching time
tf
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
ID = −9 A
出力
RL = 1.7Ω
Drain-source breakdown voltage
VDD ≈ −15 V
Duty ≤ 1%, tw = 10 μs
VDD ≈ −24 V, VGS = −10 V,
ID = −18 A
V
V
mΩ
S
pF
ns
⎯
275
⎯
⎯
790
⎯
⎯
180
⎯
⎯
20
⎯
⎯
40
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−72
A
⎯
⎯
1.2
V
VDSF
IDR = −18 A, VGS = 0 V
Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating
of drain-source voltage.
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TPC8120
−10 −6
−20
−6
ID – VDS
−4.5
−2.6 −2.5
−3
−70
−2.4
ID – VDS
−4.5
−2.6
−2.8
−3
−10
−2.3
−60
−2.5
−3.5
Drain current ID (A)
Drain current ID (A)
−16
−2.2
−12
−8
VGS = −2.1 V
−50
−2.4
−40
−30
−2.3
−20
VGS = −2.2 V
−4
0
Common source
Ta = 25°C
Pulse test
0
−0.2
−0.4
−0.6
Drain-source voltage
−0.8
−10
0
−1
Common source
Ta = 25°C
Pulse test
0
VDS (V)
−0.5
−1.0
Drain-source voltage
ID – VGS
−2
VDS (V)
VDS – VGS
−0.5
−80
VDS (V)
Common source
VDS = −10 V
Pulse test
−64
−48
Drain-source voltage
Drain current ID (A)
−1.5
−32
−16
100
Ta = −55°C
Common source
Ta = 25°C
Pulse test
−0.4
−0.3
−0.2
−0.1
−4.5
−9
ID = −18 A
25
0
−1
−2
−3
Gate-source voltage
Forward transfer admittance
|Yfs| (S)
1
−12
−16
−20
VGS (V)
RDS (ON) – ID
25
Common source
VDS = −10 V
Pulse test
−1
−8
100
Ta = −55°C
100
−4
Gate-source voltage
100
10
0
VGS (V)
|Yfs| – ID
1000
0.1
−0.1
0
−4
−10
Drain-source ON resistance
RDS (ON) (mΩ)
0
10
−4.5
VGS = −10 V
1
Common source
Ta = 25°C
Pulse test
0.1
−0.1
−100
Drain current ID (A)
−1
−10
−100
Drain current ID (A)
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TPC8120
RDS (ON) – Ta
IDR – VDS
−100
6
Common source
Pulse test
4
VGS = −4.5 V
3
ID = −4.5, −9, −18 A
2
VGS = −10 V
1
0
−80
−40
0
40
80
−3
(A)
ID = −4.5, −9, −18 A
Drain reverse current IDR
120
−4.5
−10
−1
VGS = 0,1 V
−1
−0.1
160
Common source
Ta = 25°C
Pulse test
0
0.2
Ambient temperature Ta (°C)
0.4
Drain-source voltage
Capacitance – VDS
Vth (V)
Ciss
(pF)
Coss
1000
Gate threshold voltage
VDS (V)
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
1
−0.1
−1
−10
Drain-source voltage
−1.6
−1.2
−0.8
Common source
VDS = −10 V
ID = −1 mA
Pulse test
−0.4
0
−80
−100
−40
Drain-source voltage
1.2
(2)
0.8
0.4
0
40
80
120
120
160
Dynamic input/output characteristics
VDS (V)
1.6
80
−30
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(2) Device mounted on a glass-epoxy board
(b) (Note 2b)
t = 10 s
(1)
40
Ambient temperature Ta (°C)
VDS (V)
PD – Ta
2
0
160
VDD = −24V
−20
Ambient temperature Ta (°C)
−20
VDS
−12
−6
−10
VDD = −24V
−6
−10
−12
VGS
0
200
−30
Common source
ID = −18 A
Ta = 25°C
Pulse test
0
50
100
150
200
250
VGS (V)
Capacitance C
1
Vth – Ta
10000
Drain power dissipation PD (W)
0.8
−2
100000
0
0.6
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
5
−10
0
Total gate charge Qg (nC)
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TPC8120
Normalized transient thermal impedance
rth (°C/W)
rth − tw
1000
(1)
Device mounted on a glass-epoxy board (a) (Note 2a)
(2)
Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
(1)
100
10
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(S)
Safe operating area
−100
ID max (pulse) *
Drain current ID (A)
1 ms *
−10
t = 10 ms *
−1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−1
Drain-source voltage
VDSS max
−10
−100
VDS (V)
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TPC8120
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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