TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V) TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V (Note 1) ID −11 Drain current DC JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.080 g (typ.) A Pulse (Note 1) IDP −44 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 82 mJ Avalanche current IAR −11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.030 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Circuit Configuration 8 7 6 5 1 2 3 4 Note: Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 TPC8121 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8121 Part No. (or abbreviation code) Lot No. (weekly code) Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPC8121 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −13 ⎯ ⎯ Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 VGS = −4 V, ID = −5.5 A ⎯ 16 24 VGS = −10 V, ID = −5.5 A ⎯ 8 12 VDS = −10 V, ID = −5.5 A 11 23 ⎯ ⎯ 1770 ⎯ ⎯ 400 ⎯ ⎯ 540 ⎯ ⎯ 9 ⎯ ⎯ 15 ⎯ Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-ON time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V Fall time 4.7 Ω Switching time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −5.5 A VOUT RL = 2.7 Ω Drain-source breakdown voltage VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs VDD ≈ −24 V, VGS = −10 V, ID = −11 A V V mΩ S pF ns ⎯ 65 ⎯ ⎯ 160 ⎯ ⎯ 42 ⎯ ⎯ 5 ⎯ ⎯ 13 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −44 A ⎯ ⎯ 1.2 V VDSF IDR = −11 A, VGS = 0 V 3 2009-09-29 TPC8121 ID – VDS ID – VDS −10 −5 −6 −40 −4 −3.5 −4 (A) −10 −3 −2.7 VGS = −2.5 V −2 −24 −16 Common source Ta = 25°C Pulse test 0 0 −0.06 −0.12 −0.18 Drain−source voltage −0.24 VDS −32 ID −6 −8 −10 −3 VGS = −2.7V −8 Common source Ta = 25°C Pulse test 0 0 −0.3 −3.3 −0.4 (V) −0.8 VDS (V) Drain−source voltage ID Drain current −24 −16 Ta = 100°C 0 0 25°C −1 −55°C −2 −3 −4 Gate−source voltage VGS Common source Ta = 25°C Pulse test −0.3 −0.2 ID = −11A −0.1 −5.5 −2.8 0 0 −5 −4 (V) −8 |Yfs| – ID 25 1 Common source VDS = −10 V Pulse test Drain current −10 ID Drain−source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) 100 Ta = −55°C −1 −16 VGS −20 (V) RDS (ON) – ID 100 10 −12 Gate−source voltage 100 0.1 −0.1 −2 (V) VDS – VGS Common source VDS = −10 V Pulse test −8 −1.6 VDS −0.4 (A) −32 −1.2 Drain-source voltage ID – VGS −40 −3.5 −6 Drain current ID −8 Drain current (A) −8 −3.7 −4 −5 −3.3 Common source Ta = 25°C Pulse test VGS = −4 V 10 −10 1 −0.1 −100 (A) −1 Drain current 4 −10 ID −100 (A) 2009-09-29 TPC8121 RDS (ON) – Ta IDR – VDS −100 30 −5 (A) 24 −10 −11 A IDR −5.5 A ID = −2.8 A 18 Drain reverse current VGS = −4 V 12 ID = −2.8 A,−5.5A,−11A 6 VGS = −10 V 0 −80 −40 0 40 80 Ambient temperature Ta 120 −10 −1 Common source Ta = 25°C Pulse test 0.3 (°C) 0.6 Capacitance – VDS Vth (V) Gate threshold voltage (pF) C (V) Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C −10 80 120 VDS −1.2 −0.8 Common source −0.4 V DS = −10 V ID = −1mA Pulse test 0 −80 −100 (V) −40 −30 VDS (V) (1) Drain−source voltage 1.2 (2) 0.8 0.4 40 80 120 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t = 10 s 1.6 40 Ambient temperature PD – Ta 2 0 160 Ta −25 VDD = −24 V −20 (°C) −25 VDS −15 −12 −6 −10 VDD = −24 V −6 −10 −12 −5 −5 VGS 10 20 30 Total gate charge 5 −30 −20 −15 0 0 200 Common source ID = −11 A Ta = 25°C Pulse test 40 Qg 50 60 (V) −1 −1.6 VGS Capacitance 1000 (W) VDS Vth – Ta Ciss Drain−source voltage PD 1.2 −2 100 −0.1 Drain power dissipation 0.9 Drain−source voltage 10000 0 0 VGS = 0 V −1 −0.1 0 160 −4 −3 Gate−source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 (nC) 2009-09-29 TPC8121 rth − tw 1000 Transient thermal impedance rth (°C/W) (1)Device (1) Devicemounted mountedon onaaglass-epoxy glass-epoxyboard board(a)(Note (a) (Note2a) 2a) (2)Device (2) Devicemounted mountedon onaaglass-epoxy glass-epoxyboard board(b)(Note (b) (Note2b) 2b) (2)(2) (1)(1) 100 10 1 Single Singlepulse pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 t = 10 ms * −10 1 ms * Drain current ID (A) ID max (Pulse) * −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2009-09-29 TPC8121 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-29