PJD12P03L 30V P-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@ -10V,IDS@ -8.0A=28mΩ • RDS(ON), VGS@ -4.5V,IDS@ -5.0A=36mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 12P03L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS -30 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID -12 A ID M -55 A PD 38 22 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy wi th Si ngle Pulse ID =23A, VD D =25V, L=0.5mH E AS 130 Juncti on-to-C ase Thermal Resi stance RθJC 3 .3 O C /W Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 RθJA 50 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJD12P03L ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = - 2 5 0 u A -30 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = - 2 5 0 u A -1 - -3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=-4.5V, ID=-5.0A - 28 36 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=-10V, ID=-8.0A - 21 28 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=-30V, VGS=0V - - -1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = - 1 0 V , ID = - 1 5 A 15 - - S V D S = - 1 5 V , ID = - 8 . 0 A , V G S = - 5 V - 1 4 .2 - - 2 6 .8 - - 3 .8 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = - 1 5 V , ID = - 8 . 0 A V GS = - 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 4 .8 - Tu r n - O n D e l a y Ti m e T d ( o n) - 11.5 15 - 6.2 8.5 - 6 8 .7 80 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=-15V , RL=15Ω ID=-1A , VGEN=-10V RG=3.6Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 2 5 .6 32 In p u t C a p a c i t a n c e C iss - 1550 - O ut p ut C a p a c i t a nc e C oss - 300 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 155 - V D S = - 1 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - -30 A V SD IS = - 8 . 0 A , V G S = 0 V - -0 .8 1 -1 .2 V Switching Test Circuit Gate Charge Test Circuit V IN RL V DD - V GS RL V OUT RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJD12P03L Typical Characteristics Curves (TA=25OC,unless otherwise noted) 50 -10V -6.0V -5.0V -4.5V 50 -ID - Drain Source Current (A) -ID - Drain-to-Source Current (A) 60 -4.0V 40 30 -3.5V 20 -3.0V 10 -2.5V 0 V DS=-10V 40 30 T J=25 OC 20 T J=125 OC 10 T J=-55 OC 0 0 1 2 3 4 5 1.5 Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 3.5 4 4.5 5 100 80 60 V GS=-4.5V 40 20 V GS=-10V 0 ID =-8.0A 80 60 T J=125 OC 40 T J=25 OC 20 0 0 10 20 30 40 50 60 ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 3 FIG.2- Transfer Characteristic 100 1.4 2.5 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 1.5 2 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) FIG.4- On Resistance vs Gate to Source Voltage V GS=-10V I D=-8.0A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 -VGS - Gate-to-Source Voltage (V) PJD12P03L -Vgs Vgs Qg Qsw Vgs(th) 10 V DS =-15V I D =-8.0A 8 6 4 2 0 0 Qg(th) Qgs 5 I D =-250uA 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 30 39 I D =-250uA 38 37 36 35 34 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature -IS - Source Current (A) 25 o o 100 20 Fig.7 - Gate Charge -BVDSS - Breakdown Voltage (V) -Vth - G-S Threshold Voltage (NORMALIZED) Fig.6 - Gate Charge Waveform 1.2 15 Qg - Gate Charge (nC) Qg Qgd 10 Fig.9 - Breakdown Voltage vs Junction Temperature V GS =0V 10 T J=125 OC T J =25 OC 1 T J =-55 OC 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4