VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V • Low leakage current < 0.1 µA 21129 • Low load capacitance CD = 12.5 pF 20855 • ESD-protection acc. IEC 61000-4-2 ± 18 kV contact discharge ± 20 kV air discharge MARKING (example only) • Soldering can be checked by standard vision inspection. No X-ray necessary XY • Pin plating NiPdAu (e4) no whisker growth • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC 21121 Bar = pin 1 marking X = Date code Y = Type code (see table below) and in ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VCUT03B1-DD1 VCUT03B1-DD1 8000 8000 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VCUT03B1-DD1 LLP1006-2M N 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current PARAMETER Acc. IEC 61000-4-5; tp = 8/20 µs; single shot IPPM 3.5 A Peak pulse power Pin 1 to pin 2 Acc. IEC 61000-4-5; tp = 8/20 µs; single shot PPP 40 W ESD immunity Operating temperature Contact discharge acc. IEC61000-4-2; 10 pulses Air discharge acc. IEC61000-4-2; 10 pulses Junction temperature Storage temperature VESD ± 18 ± 20 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81148 Rev. 1.3, 13-Jul-10 For technical questions, contact: [email protected] www.vishay.com 1 VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M CUT THE SPIKES WITH VCUT03B1-DD1 The VCUT03B1-DD1 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03B1-DD1 offers a high isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nlines - - 1 lines at IR = 0.1 µA VRWM 3.5 - - V at V = 3.5 IR - 0.1 µA V Reverse stand-off voltage Reverse current at I =1 mA VBR 5.8 6.7 7.5 at IPP = 1 A VC - 7.8 9 V at IPP = IPPM = 3.5 A VC - 9.5 11.5 V at V = 0 V; f = 1 MHz CD - 12.5 15 pF at V = 2.5 V; f = 1 MHz CD - 11.5 - pF Reverse breakdown voltage Reverse clamping voltage Capacitance TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 14 120 % f = 1 MHz 12 10 80 % CD (pF) Discharge Current IESD Rise time = 0.7 ns to 1 ns 100 % 60 % 53 % 40 % 8 6 4 27 % 20 % 2 0 0% - 10 0 10 20 30 40 50 60 70 80 90 100 0 1 2 21787 Time (ns) 20557 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) 3 4 5 6 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR 8 8 µs to 100 % 100 % 7 6 VR (V) IPPM 80 % 60 % 20 µs to 50 % 5 4 3 40 % 2 20 % 1 0% 0 20548 10 20 30 Time (µs) Fig. 2 - 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 www.vishay.com 2 0 10-2 10-1 40 21788 1 101 102 103 104 105 IR (µA) Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF For technical questions, contact: [email protected] Document Number: 81148 Rev. 1.3, 13-Jul-10 VCUT03B1-DD1 Bidirectional Symmetrical (BiSy) Vishay Semiconductors Single Line ESD-Protection Diode in LLP1006-2M 12 10 VC (V) 8 VC 6 4 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 2 0 0 1 2 21789 3 4 5 IPP (A) Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR 70 Acc. IEC 61000-4-2 ± 8 kV contact discharge 60 50 VC-ESD (V) 40 30 20 10 0 - 10 - 20 - 30 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21790 Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 160 Acc. IEC 61000-4-2 contact discharge 140 VC-ESD (V) 120 100 80 VC-ESD 60 40 20 0 0 5 21791 10 15 20 25 30 VESD (kV) Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) Document Number: 81148 Rev. 1.3, 13-Jul-10 For technical questions, contact: [email protected] www.vishay.com 3 VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M 0.25 (0.010) 0.3 (0.012) 0.65 (0.026) 0.35 (0.014) 0.55 (0.022) 0 (0.000) Orientation Identification 0.125 (0.005) ref. 0.45 (0.018) 0.05 (0.002) 0.40 (0.016) 0.33 (0.013) 0.55 (0.022) 0.45 (0.018) 0.2 (0.008) 0.15 (0.006) PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2M 1.05 (0.041) 0.5 (0.020) 0.6 (0.024) foot print recommendation: 0.05 (0.002) Document no.:S8-V-3906.04-019 (4) Created - Date: 24.June.2009 0.25 (0.010) 1 (0.039) 0.2 (0.008) 0.95 (0.037) solder resist mask solder pad 0.5 (0.020) soldermask opening ± 0.03 measured middle of the package 21798 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81148 Rev. 1.3, 13-Jul-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1