VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V FEATURES • Ultra compact LLP75-7L package • Low package height < 0.6 mm 6 5 4 • 3-line USB ESD-protection with max. working range = 5.5 V • VBUS-protection with 28 V working range 7 1 2 3 • Low leakage current • Low load capacitance CD = 0.7 pF 21102 • ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge 20517 1 • Surge current acc. IEC 61000-4-5 IPP > 3 A MARKING (example only) • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) XX YY • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21001 Dot = pin 1 marking XX = date code YY = type code (see table below) ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY VBUS053CZ-HAF-G-08 3000 15 000 DEVICE NAME VBUS053CZ-HAF PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VBUS053CZ-HAF LLP75-7L UA 4.2 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 3 A acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP Data line D+, D-, ID: Pin 1, 2 and 3 to ground (pin 7) Peak pulse current Peak pulse power ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses VESD 36 W ± 15 kV ± 15 kV 3 A VBUS: Pin 6 to ground (pin 7) Peak pulse current Peak pulse power ESD immunity Operating temperature acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature 156 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C VESD ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85200 Rev. 1.3, 23-May-11 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF All inputs (pin 1, 2, and 3) to ground (pin 7) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of line which can be protected Nchannel - at IR = 0.1 μA VRWM - Reverse working voltage at VR = 3.3 V Reverse current at VR = 3.3 V; T = 65 °C IR at VR = VRWM = 5.5 V MAX. UNIT - 3 lines - 5.5 V - 0.02 μA - - 0.085 μA - - 0.1 μA V Forward voltage at IF = 15 mA VF 0.7 - 1.2 Reverse breakdown voltage at IR = 1 mA VBR 6.5 - 10 V - 10 12 V Reverse clamping voltage at IPP = 1 A; acc. IEC 61000-4-5 at IF = 3 A; acc. IEC 61000-4-5 Forward clamping voltage Line capacitance VF Test pin at VR = 0 V; any other I/O pin at VR = 3.3 V; f = 1 MHz - 15 18 V - 3.4 4.1 V - 0.7 1 pF - 0.35 0.5 pF - - 0.1 pF CD Among pins 1, 2 and 3 at VR = 0 V; f = 1 MHz Line to line capacitance Line symmetry VC at IPP = 3 A; acc. IEC 61000-4-5 Difference of the line capacitance dCD Note • Ratings at 25 °C, ambient temperature unless otherwise specified ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF VBUS (pin 6) to ground (pin 7) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of line which can be protected Nchannel - - 1 lines at IR = 100 nA VRWM - - 28 V Reverse current at VR = VRWM = 28 V IR - - 100 nA Forward voltage at IF = 10 mA VF 0.6 0.75 0.9 V Reverse breakdown voltage at IR = 1 mA VBR 32 - 40 V - 37 45 V - 42 52 V Protection paths Reverse working voltage Reverse clamping voltage at IPP = 1 A; acc. IEC 61000-4-5; T = 25 °C VC at IPP = 3 A; acc. IEC 61000-4-5; T = 25 °C Forward clamping voltage at IF = 3 A; acc. IEC 61000-4-5 VF - - 2.2 V at VR = 0 V; f = 1 MHz CD - 31 40 pF Line capacitance Note • Ratings at 25 °C, ambient temperature unless otherwise specified APPLICATION NOTE The VBUS053CZ-HAF is intended as an ESD-protection and transient voltage suppressor for one USB-OTG port. The LLP75-7L package contains two separate dies which are mounted on a common ground plane (pin 7). The high-speed data lines D-, D+ and ID, are connected to any of the pins no. 1 to 3. As long as the signal voltage on the data lines is between the ground- and the 5 V working range, the low capacitance PN-diodes offer a very high isolation to ground and to the other data lines. But as soon as any transient signal like an ESD-signal, exceeds this working range of 5 V in either the positive or negative direction, one of the PN-diodes gets intothe forward mode and clamps the transient either to ground or to the avalanche break through level. An extra avalanche diode (separate die) clamps the supply line voltage (VBUS at pin 6) above the 28 V working range to ground (pin 7). Due to the “two die construction” the VBUS line has a very high isolation to the data lines. In case of a destructive transient signal, i.e. coming from a charger, the data lines will not be influenced. (pinning top view) VBUS 6 5 4 nc. nc. 6 5 4 2 3 7 GND 7 1 D- 2 D+ 3 ID 1 21103 Remark: The input pins no. 1, 2 and 3 are symmetrical. Each of the data signals D-, D+ and ID can be connected to pin 1, 2 or 3. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 85200 Rev. 1.3, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF USB-OTG BUS-Port ESD-Protection Vishay Semiconductors for VBUS = 28 V TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % 0.8 f = 1 MHz, one I/O pin at 3.3 V Rise time = 0.7 ns to 1 ns 0.7 Discharge Current IESD 100 % 0.6 80 % CD (pF) 0.5 60 % 53 % 0.4 Pin 1, 2 or 3 to pin 7 0.3 40 % 0.2 27 % 20 % 0.1 0 0% - 10 0 10 20 30 40 50 60 70 80 90 100 0 1 2 22080 Time (ns) 20557 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) 3 4 VR (V) Fig. 4 - Typical Capacitance CD vs. Reverse Voltage VR 100 8 µs to 100 % 100 % 10 Pin 6 to pin 7 80 % 1 IF (mA) IPPM 60 % 20 µs to 50 % Pin 1, 2 or 3 to pin 7 0.1 40 % 0.01 20 % 0.001 0.5 0% 0 10 20548 20 30 40 Time (µs) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 0.7 0.8 0.9 1.0 1.1 VF (V) Fig. 5 - Typical Forward Current IF vs. Forward Voltage VF 40 35 Pin 6 to pin 7 f = 1 MHz 35 30 Pin 6 to pin 7 30 VR (V) 25 CD (pF) 0.6 22409 20 15 25 20 15 10 Pin 1, 2 or 3 to pin 7 10 5 5 0 0.01 0 0 22408 5 10 15 20 25 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Document Number: 85200 Rev. 1.3, 23-May-11 0.1 22410 1 10 100 1000 10 000 IR (µA) Fig. 6 - Typical Reverse Voltage VR vs.Reverse Current IR For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V 18 50 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 14 30 Pin 1, 2 or 3 to pin 7 20 VC-ESD (V) VC (V) 12 10 VF 8 6 Pin 7 to pin 1, 2 or 3 Pin 6 to pin 7 0 - 10 - 20 - 40 2 - 50 0 0 1 2 3 - 60 - 10 0 4 IPP (A) 22083 10 20 30 40 50 60 70 80 90 t (ns) 22413 Fig. 7 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Fig. 10 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 50 140 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 45 40 100 80 VC-ESD (V) 30 25 VC 20 60 20 10 0 5 - 20 Pin 7 to pin 6 0 1 2 3 4 Fig. 8 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 80 10 20 30 40 50 60 70 80 90 t (ns) 22414 Fig. 11 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 acc. IEC 61000-4-2 + 8 kV contact discharge acc. IEC 61000-4-2 - 8 kV contact discharge 20 0 60 Pin 6 to pin 7 40 20 VC-ESD (V) 100 - 40 - 10 0 5 IPP (A) 22411 Pin 1, 2 or 3 to pin 7 40 15 0 acc. IEC 61000-4-2 + 8 kV contact discharge 120 Pin 6 to pin 7 35 VC (V) 10 - 30 4 VC-ESD (V) acc. IEC 61000-4-2 - 8 kV contact discharge 40 16 - 20 Pin 1, 2 or 3 to pin 7 - 40 - 60 - 80 - 100 0 - 20 - 10 0 22412 - 120 10 20 30 40 50 60 70 80 90 t (ns) Fig. 9 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 - 140 - 10 0 10 20 30 40 50 60 70 80 90 22415 t (ns) Fig. 12 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) For technical questions, contact: [email protected] Document Number: 85200 Rev. 1.3, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS053CZ-HAF USB-OTG BUS-Port ESD-Protection Vishay Semiconductors for VBUS = 28 V 60 80 acc. IEC 61000-4-2 contact discharge 50 40 30 Pin 1, 2 or 3 to pin 7 40 VC-ESD (V) VC-ESD (V) 20 10 VC-ESD 0 acc. IEC 61000-4-2 contact discharge 60 Pin 6 to pin 7 20 VC-ESD 0 - 10 t = 30 ns t = 30 ns - 20 - 20 - 30 - 40 - 40 0 5 10 15 20 0 VESD (kV) 22416 5 10 Fig. 13 - Typical Clamping Voltage at after 30 ns of ESD Contact Discharge (acc. IEC 61000-4-2) 15 20 25 30 VESD (kV) 22417 Fig. 14 - Typical Clamping Voltage at after 30 ns of ESD Contact Discharge (acc. IEC 61000-4-2) 0.45 (0.018) 0.55 (0.022) 0.2 (0.008) 0.3 (0.012) 0.2 (0.008) 0.3 (0.012) 1 (0.039) 0.2 (0.008) 0.3 (0.012) Heat sink 0.95 (0.037) 1.05 (0.041) PACKAGE DIMENSIONS in millimeters (inches): LLP75-7L 0.5 (0.020) 0.6 (0.024) 0.6 (0.024) 0.54 (0.021) 1.65 (0.065) 1.55 (0.061) 0.05 (0.002) 0 (0.000) 0.15 (0.006) 0.25 (0.010) 1.65 (0.065) Pin 1 marking 1.55 (0.061) Foot print recommendation: 0.5 (0.020) 0.5 (0.020) 0.3 (0.012) 0.3 (0.012) Document no.:S8-V-3906.02-014 (4) Created - Date: 04. April 2006 0.15 (0.006) 1 (0.039) 1 (0.039) 0.5 (0.020) 0.25 (0.010) 0.15 (0.006) Solder resist mask Solder pad 0.5 (0.020) 20500 Document Number: 85200 Rev. 1.3, 23-May-11 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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