GSOT05C - HT3 VISHAY Vishay Semiconductors ESD Protection Diode Features 3 • Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) see IPPM below • Space saving LiLiPut package Top view Mechanical Data 1 Pin 1 18151 2 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 5 mg Case: LLP75-3B Plastic Package Molding Compound Flammability Rating: UL 94 V-0 Parts Table Part Ordering code GSOT05C-HT3 Marking GSOT05C-HT3-GS08 Remarks 05 Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Symbol Value Unit Peak power dissipation1) Parameter 8/20 µs pulse PPK 300 W Forward surge current 8.3 ms single half sine-wave IFSM 7 A 1) Test condition Non-repetitive current pulse and derated above TA = 25 °C Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Operation and storage temperature range Symbol Value Unit Tstg, TJ - 55 to + 150 °C Electrical Characteristics Part Number Device Marking Code Rated Stand-off Voltage Minimum Breakdown Voltage @ 1 mA GSOT05CHT3 05 Document Number 85825 Rev. 1, 02-Jun-03 Maximum Clamping Voltage @ IP = 1 A @ IP = 5 A Maximum Pulse Peak Current Maximum Leakage Current Maximum Capacitance tp = 8/20 µs @ VWM @ 0 V, 1 MHz VWM VBR VC IPPM ID C V V V A µA pF 5.0 6.0 17 100 400 9.8 12.5 www.vishay.com 1 GSOT05C - HT3 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) PPPM - Peak Pulse Power (W) 10000 1000 300W, 8/20 µs waveshape 100 10 0.1 1.0 17476 10 100 td - Pulse Duration ( µ s ) 1000 10000 Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time IPPM - Peak Pulse Current, % IRSM 110 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 100 90 80 70 60 50 td = IPP 2 40 30 20 10 0 5 0 10 15 25 20 30 t - Time ( µ s ) 17477 Figure 2. Pulse Waveform 100 Peak Pulse Power 8/20 µ s % Of Rated Power 80 60 40 20 Average Power 0 0 25 17478 50 75 100 125 150 TL - Lead Temperature °C Figure 3. Power Derating www.vishay.com 2 Document Number 85825 Rev. 1, 02-Jun-03 GSOT05C - HT3 VISHAY Vishay Semiconductors Package Dimensions in mm 18057 Document Number 85825 Rev. 1, 02-Jun-03 ISO Method E www.vishay.com 3 GSOT05C - HT3 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85825 Rev. 1, 02-Jun-03 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.