VISHAY SMF17A

SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection Diodes
Features
•
•
•
•
For surface mounted applications
Low-profile package
e3
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 61000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC801-4)
• IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
• Low incremental surge resistance, excellent
clamping capability
• 200 W peak pulse power capability with a
10/1000 µs waveform, repetition rate
(duty cycle): 0.01 %
• Very fast response time
• High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17249
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 15 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power dissipation
Symbol
Value
Unit
10/1000 µs waveform1)
Test condition
PPPM
200
W
8/20 µs waveform
PPPM
1000
W
1)
Peak pulse current
10/1000 µs waveform1)
IPPM
next
Table
A
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
Symbol
Value
Unit
RthJA
180
K/W
Tstg, TJ
- 55 to + 150
°C
1)
Non-repetitive current pulse and derated above TA = 25 °C
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Thermal resistance
Test condition
2)
Operation junction and storage
temperature range
2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 µm thick)
Document Number 85811
Rev. 2.0, 29-Apr-05
www.vishay.com
1
SMF5V0A to SMF51A
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A (uni-directional only)
Partnumber
Marking
Code
UNI
Breakdown
Test Current
Voltage1)
Stand-off
Voltage
Maximum
Reverse
Leakage
Maximum
Peak Pulse
Surge
Maximum
Clamping
Voltage
Junction
Capacitance
Cj @
VR = 0 V,
f = 1 MHz
Current 2,3)
V(BR)
@ IT
VWM
@ VWM
ID
IPPM
@ IPPM
VC
V
mA
V
µA
A
V
min
SMF5V0A
AE
6.40
10
5.0
400
21.7
9.2
1030
SMF6V0A
AG
6.67
10
6.0
400
19.4
10.3
1010
SMF6V5A
AK
7.22
10
6.5
250
17.9
11.2
850
SMF7V0A
AM
7.78
10
7.0
100
16.7
12.0
750
SMF7V5A
AP
8.33
1.0
7.5
50
15.5
12.9
730
SMF8V0A
AR
8.89
1.0
8.0
25
14.7
13.6
670
SMF8V5A
AT
9.44
1.0
8.5
10
13.9
14.4
660
SMF9V0A
AV
10.0
1.0
9.0
5.0
13.5
15.4
620
SMF10A
AX
11.1
1.0
10
2.5
11.8
17.0
570
SMF11A
AZ
12.2
1.0
11
2.5
11.0
18.2
460
SMF12A
BE
13.3
1.0
12
2.5
10.1
19.9
440
SMF13A
BG
14.4
1.0
13
1.0
9.3
21.5
420
SMF14A
BK
15.6
1.0
14
1.0
8.6
23.2
370
SMF15A
BM
16.7
1.0
15
1.0
8.2
24.4
350
SMF16A
BP
17.8
1.0
16
1.0
7.7
26.0
340
SMF17A
BR
18.9
1.0
17
1.0
7.2
27.6
310
SMF18A
BT
20.0
1.0
18
1.0
5.8
29.2
305
SMF20A
BV
22.2
1.0
20
1.0
6.2
32.4
207
SMF22A
BX
24.4
1.0
22
1.0
5.6
35.5
265
SMF24A
BZ
26.7
1.0
24
1.0
5.1
38.9
240
SMF26A
CE
28.9
1.0
26
1.0
4.8
42.1
225
SMF28A
CG
31.1
1.0
28
1.0
4.4
45.4
210
SMF30A
CK
33.3
1.0
30
1.0
4.1
48.4
205
SMF33A
CM
36.7
1.0
33
1.0
3.8
53.3
190
SMF36A
CP
40.0
1.0
36
1.0
3.4
58.1
180
SMF40A
CR
44.4
1.0
40
1.0
3.1
64.5
165
SMF43A
CT
47.8
1.0
43
1.0
2.9
69.4
160
SMF45A
CV
50.0
1.0
45
1.0
2.8
72.7
155
SMF48A
CX
53.3
1.0
48
1.0
2.6
77.4
150
SMF51A
CZ
56.7
1.0
51
1.0
2.4
82.4
145
1)
Pulse test tp ≤ 5.0 ms
2)
Surge current waveform 10/1000 µs
3)
All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
pF
typ
Document Number 85811
Rev. 2.0, 29-Apr-05
SMF5V0A to SMF51A
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10
PPPM - Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
1
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
17250
td - Pulse Width (sec.)
Peak Pulse Power (PPP) or Current (IPPM)
Derating in Percentage, %
Figure 1. Peak Pulse Power Rating
100
75
50
25
0
0
25
50
17251
75
100
125
150
175
200
TA - Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
IPPM - Peak Pulse Current, % IRSM
150
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
2
IPPM
50
10/1000 sec. Waveform
as defined by R.E.A.
td
0
0
1.0
17252
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
Document Number 85811
Rev. 2.0, 29-Apr-05
www.vishay.com
3
SMF5V0A to SMF51A
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.85 (0.033)
0.35 (0.014)
3.9 (0.152)
3.5 (0.137)
5
0.16 (0.006)
0.99 (0.039)
0.97 (0.038)
Z
5
Cathode Band
Top View
Detail Z
enlarged
1.9 (0.074)
1.7 (0.066)
1.2 (0.047)
0.8 (0.031)
0.10 max
2.9 (0.113)
2.7 (0.105)
ISO Method E
Mounting Pad Layout
1.6 (0.062)
1.3 (0.051)
1.4 (0.055)
17247
www.vishay.com
4
Document Number 85811
Rev. 2.0, 29-Apr-05
SMF5V0A to SMF51A
Vishay Semiconductors
Blistertape for SMF
PS
18513
Document Number 85811
Rev. 2.0, 29-Apr-05
www.vishay.com
5
SMF5V0A to SMF51A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85811
Rev. 2.0, 29-Apr-05