PHILIPS PMWD26UN

PMWD26UN
Dual N-channel µTrenchMOS ultra low level FET
Rev. 02 — 19 May 2005
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology.
1.2 Features
■ Surface-mounted package
■ Very low threshold voltage
■ Low profile
■ Fast switching
1.3 Applications
■ Portable appliances
■ Battery management
■ PCMCIA cards
■ Load switching
1.4 Quick reference data
■ VDS ≤ 20 V
■ Ptot ≤ 3.1 W
■ ID ≤ 7.8 A
■ RDSon ≤ 30 mΩ
2. Pinning information
Table 1:
Pinning
Pin
Description
1
drain1 (D1)
2, 3
source1 (S1)
4
gate1 (G1)
5
gate2 (G2)
6, 7
source2 (S2)
8
drain2 (D2)
Simplified outline
8
Symbol
5
D1
S1
D2
G1
S2
G2
msd901
1
4
SOT530-1 ((TSSOP8)
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
3. Ordering information
Table 2:
Ordering information
Type number
PMWD26UN
Package
Name
Description
Version
TSSOP8
plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
20
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
20
V
VGS
gate-source voltage
-
±10
V
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
[1]
-
7.8
A
Tsp = 100 °C; VGS = 4.5 V; Figure 2
[1]
-
4.7
A
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
[1]
-
31.3
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
[1]
-
3.1
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
drain current (DC)
ID
IDM
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
-
2.6
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
10.3
A
[1]
Single device conducting.
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
2 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
03aa17
120
03aa25
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
Tsp (°C)
200
0
50
100
150
Tsp (°C)
200
VGS ≥ 4.5 V
P tot
P der = ------------------------ × 100 %
P
°
ID
I der = --------------------- × 100 %
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
003aaa266
102
ID
(A)
Limit RDSon = VDS/ID
tp = 10 µ s
10
100 µ s
1 ms
1
DC
10 ms
100 ms
10-1
10-2
10-1
1
10
VDS (V)
102
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
3 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from junction to solder point
Figure 4
-
-
40
K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
-
100
-
K/W
003aaa267
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
0.05
0.02
δ=
P
1
tp
T
single pulse
t
tp
T
-1
10
10-4
10-3
10-2
10-1
1
10
tp (s)
102
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
4 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
20
-
-
V
Tj = −55 °C
18
-
-
V
0.45
0.7
-
V
Tj = 25 °C
-
-
1
µA
Tj = 150 °C
-
-
100
µA
-
-
100
nA
Tj = 25 °C
-
26
30
mΩ
Tj = 150 °C
-
44
51
mΩ
VGS = 1.8 V; ID = 3.5 A; Figure 7 and 8
-
34
40
mΩ
VGS = 2.5 V; ID = 3.5 A; Figure 7 and 8
-
29
35
mΩ
ID = 4 A; VDS = 16 V; VGS = 4.5 V;
Figure 13
-
23.6
-
nC
-
2.1
-
nC
-
6.7
-
nC
VGS = 0 V; VDS = 16 V; f = 1 MHz;
Figure 11
-
1366 -
pF
-
399
-
pF
-
239
-
pF
Static characteristics
V(BR)DSS
drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
IDSS
drain-source leakage current
VDS = 20 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.5 A; Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VDS = 10 V; RL = 1 Ω; VGS = 4.5 V;
RG = 6 Ω
-
14
-
ns
-
22
-
ns
turn-off delay time
-
56
-
ns
fall time
-
33
-
ns
-
0.67
1.2
V
-
45
-
ns
-
13
-
nC
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 4 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 4 A; dIS/dt = −100 A/µs; VGS = 0 V;
VR = 20 V
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
5 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
003aaa268
8
4.5
ID
(A)
003aaa269
8
1.8
ID
(A)
VGS (V) = 1.3
6
6
4
4
1.2
Tj = 150 °C
2
25 °C
2
1.1
1
0
0
0
0.2
0.4
0.6
0
0.8
1
VDS (V)
1.5
2
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaa270
1.1
RDSon
(mΩ)
1
VGS (V)
Tj = 25 °C
80
0.5
1.2
03aa27
2
1.3
a
60
1.5
40
1
1.8
20
VGS (V) = 2.5
4.5
4
6
0.5
0
0
2
ID (A)
8
Tj = 25 °C
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
9397 750 14982
Product data sheet
0
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
6 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
03aj64
10−3
03aj65
1.2
VGS(th)
ID
(A)
(V)
max
0.9
10−4
typ
0.6
min
min
10−5
typ
max
0.3
0
-60
10−6
0
60
120
Tj (°C)
0
180
0.2
0.4
0.6
0.8
1
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
003aaa271
104
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aaa272
8
IS
(A)
C
(pF)
6
Ciss
Tj = 25 °C
150 °C
103
4
2
Coss
Crss
102
10-1
1
10
VDS (V)
102
0
0
0.4
0.6
0.8
1
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
9397 750 14982
Product data sheet
0.2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
7 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
003aaa273
5
VGS
(V)
4
3
2
1
0
0
5
10
15
20
25
QG (nC)
ID = 4 A; VDD = 16 V
Fig 13. Gate-source voltage as a function of gate charge; typical values
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
8 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
7. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
E
A
D
X
c
y
HE
v M A
Z
8
5
A2
A
(A3)
A1
pin 1 index
θ
Lp
L
detail X
1
4
e
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(2)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.05
0.95
0.85
0.25
0.30
0.19
0.20
0.13
3.1
2.9
4.5
4.3
0.65
6.5
6.3
0.94
0.7
0.5
0.1
0.1
0.1
0.70
0.35
8°
0°
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT530-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
00-02-24
03-02-18
MO-153
Fig 14. Package outline SOT530-1 (TSSOP8)
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
9 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
8. Revision history
Table 6:
Revision history
Document ID
Release date
Data sheet status
Change notice Doc. number
Supersedes
PMWD26UN_2
20050519
Product data sheet
-
PMWD26UN-01
Modifications:
PMWD26UN-01
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•
•
•
•
•
Ptot and ID data revised in Section 1.4 “Quick reference data”
Section 3 “Ordering information” added
Ptot, ID, IS, IDM and ISM data revised in Table 3 “Limiting values”
Rth(j-sp) data revised in Table 4 “Thermal characteristics”
Figure 3, 4, 5, 6, 7 and 12 revised.
20030122
Product data
-
9397 750 14982
Product data sheet
9397 750 14982
9397 750 10834
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
10 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
9. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14982
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 19 May 2005
11 of 12
PMWD26UN
Philips Semiconductors
Dual N-channel µTrenchMOS ultra low level FET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 19 May 2005
Document number: 9397 750 14982
Published in The Netherlands