PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ESD protection diodes 1.3 Applications ■ Relay driver ■ High-speed line driver 1.4 Quick reference data ■ VDS ≤ 60 V ■ RDSon ≤ 4.5 Ω ■ ID ≤ 260 mA ■ Ptot ≤ 0.56 W 2. Pinning information Table 1: Pinning Pin Description 1 gate (G) 2 source (S) 3 drain (D) Simplified outline Symbol D 3 G 1 2 SOT323 (SC-70) S 03ab60 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2: Ordering information Type number PMF3800SN Package Name Description Version SC-70 plastic surface mounted package; 3 leads SOT323 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage - ±15 V ID drain current Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 260 mA Tsp = 100 °C; VGS = 10 V; Figure 2 - 165 mA IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 560 mA Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.56 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C - 280 mA - 560 mA - 1 kV Source-drain diode Tsp = 25 °C IS source (diode forward) current ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Electrostatic discharge voltage Vesd electrostatic discharge voltage Human body model 1; C = 100 pF; R = 1.5 kΩ 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 2 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P ° 50 100 150 Tsp (°C) 200 ID I der = --------------------- × 100 % I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03ap26 1 Limit RDSon = VDS / ID tp = 10 µ s ID (A) 100 µ s 10-1 1 ms 10 ms DC 100 ms 10-2 10-3 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 3 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) Conditions Min Typ Max Unit Figure 4 - - 220 K/W 03ap25 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 0.05 0.02 10 δ= P single pulse tp T t tp T 1 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 4 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V 16 22 - V Tj = 25 °C 1 2 - V Tj = 150 °C 0.6 - - V Tj = −55 °C - - 3.5 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 10 µA - 50 500 nA Tj = 25 °C - 2.8 4.5 mΩ Tj = 150 °C - 5.2 8.4 mΩ VGS = 4.5 V; ID = 200 mA; Figure 6 and 8 - 3.8 5.3 mΩ ID = 0.5 A; VDS = 48 V; VGS = 10 V; Figure 11 - 0.85 - nC - 0.55 - nC - 0.07 - nC - 13 40 pF - 8 30 pF - 4 10 pF - 3 - ns - 9 - ns - 0.93 1.5 V - 30 - ns - 30 - nC Static characteristics V(BR)DSS drain-source breakdown voltage V(BR)GSS gate-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 10 µA; VGS = 0 V IG = ±1 mA; VDS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 VDS = 48 V; VGS = 0 V IGSS gate leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; Figure 6 and 8 Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ton turn-on time toff turn-off time VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 13 VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V; VR = 25 V 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 5 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 03an70 0.5 VGS (V) = 10 Tj = 25 °C ID (A) 0.4 VGS (V) = 3.5 Tj = 25 °C 8 4.5 0.3 03an71 10 RDSon (Ω) 6 4 6 4 4.5 0.2 6 4 3.5 10 0.1 2 3 0 0 0 0.5 1 1.5 VDS (V) 2 0 Tj = 25 °C 0.2 0.3 0.4 ID (A) 0.5 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03an72 0.5 ID (A) 0.1 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.4 VDS > ID x RDSon a 0.4 1.8 0.3 1.2 0.2 0.6 0.1 150 °C Tj = 25 °C 0 0 2 4 VGS (V) 0 -60 6 Tj = 25 °C and 150 °C; VDS > ID × RDSon 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25 °C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 9397 750 15218 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 6 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 03aa34 2.4 03aa37 10-1 ID (A) VGS(th) (V) typ 10-2 1.8 10-3 min 1.2 min typ 10-4 0.6 10-5 0 -60 10-6 0 60 120 Tj (°C) 0 180 0.6 1.2 1.8 VGS (V) 2.4 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ab09 15 VGS (V) 10 5 0 0 0.3 0.6 0.9 QG (nC) 1.2 ID = 0.5 A; VDS = 48 V Fig 11. Gate-source voltage as a function of gate charge; typical values 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 7 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 03an73 0.5 03aa46 102 VGS = 0 V IS (A) 0.4 C (pF) Ciss 0.3 10 0.2 Coss 150 °C Tj = 25 °C Crss 0.1 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 1 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 9397 750 15218 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 8 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC SOT323 JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-04 Fig 14. Package outline SOT323 (SC-70) 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 9 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status PMF3800SN_2 20050701 Product data sheet - Modifications: PMF3800SN_1 • Change notice Doc. number PMF3800SN_1 Table 5 “Characteristics”: Addition of QG data to table. 20050208 Product data sheet - 9397 750 15218 Product data sheet 9397 750 15218 Supersedes 9397 750 14255 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 10 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 15218 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 1 July 2005 11 of 12 PMF3800SN Philips Semiconductors N-channel TrenchMOS standard level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 July 2005 Document number: 9397 750 15218 Published in The Netherlands