VISHAY 180RKI40PBF

180RKI...PbF /181RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AB ( TO-93)
RoHS
COMPLIANT
• RoHS complaint
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AB (TO-93)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
IT(AV)
• Controlled DC power supplies
180 A
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
180
A
80
°C
285
ITSM
I2 t
50 Hz
3800
60 Hz
4000
50 Hz
72
60 Hz
66
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400 to 1000
V
100
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
PART NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
40
400
500
80
800
900
100
1000
1100
180/181RKI
Document Number: 94382
Revision: 11-Aug-08
For technical questions, contact: [email protected]
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
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180RKI...PbF /181RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 180 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
180
A
80
°C
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
Maximum RMS on-state current
IRMS
DC at 79 °C case temperature
285
t = 10 ms
No voltage
reapplied
3800
100 % VRRM
reapplied
3500
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2 t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t
No voltage
reapplied
4000
Sinusoidal half wave,
intial TJ = TJ maximum
3660
72
66
61
100 % VRRM
reapplied
720
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.83
VT(TO)2
(I > π × IT(AV)), TJ = TJ maximum
0.89
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.92
High level value of on-state slope resistance
rt2
(I > π IT(AV)), TJ = TJ maximum
0.81
Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.35
VTM
Maximum holding current
IH
Typical latching current
IL
kA2s
56
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
600
TJ = 25 °C, anode supply 12 V resistive load
1000
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
VALUES
UNITS
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
300
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V
dV/dt = 20 V/µs
100
µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of
rise of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum rated VDRM/VRRM applied
30
mA
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For technical questions, contact: [email protected]
Document Number: 94382
Revision: 11-Aug-08
180RKI...PbF /181RKI...PbF Series
Phase Control Thyristors
(Stud Version), 180 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp ≤ 5 ms
10
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
IGT
20
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
TJ = - 40 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
TJ = TJ maximum
DC gate voltage not to trigger
A
V
5.0
TJ = 25 °C
VGD
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
UNITS
W
3.0
TJ = - 40 °C
DC gate current required to trigger
MAX.
130
-
65
150
35
-
2.0
-
1.2
2.5
0.9
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.15
Maximum thermal resistance,
junction to ambient
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
°C
K/W
Mounting force, ± 10 %
Approximate weight
Nm
(lbf · in)
280
Case style
See dimensions - link at the end of datasheet
g
TO-209AB (TO-93)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.050
0.032
120°
0.063
0.059
90°
0.080
0.082
60°
0.118
0.124
30°
0.225
0.228
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94382
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
3
180RKI...PbF /181RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
Maximum Allowable Case Temperature (°C)
130
181RKI Series
RthJC (DC) = 0.15 K/W
120
110
Conduc tion Angle
100
90
30°
80
60°
90°
120° 180°
70
0
20 40 60 80 100 120 140 160 180 200
130
181RKI Series
R thJC (DC) = 0.15 K/ W
120
110
Conduc tion Period
100
30°
90
60°
90°
120°
80
180°
DC
70
0
50
100
150
200
250
300
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
240
0.6
K/
W
aR
0.8
K/ W
1K
/W
RMS Limit
120
e lt
-D
140
K/ W
.1
=0
160
SA
R th
180
W
K/
200
/W
2K
0.
180°
120°
90°
60°
30°
220
3
0.
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
(Stud Version), 180 A
100
Conduc tion Angle 1.5
K
80
/W
60
181RKI Series
TJ = 125°C
40
20
2 K/ W
0
0
20 40 60 80 100 120 140 160 180
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
350
K/
W
W
K/
0.
3
1
0.
250
0.
2
=
K/
W
ta
el
-D
DC
180°
120°
90°
60°
30°
300
A
hS
R t
200
R
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
150 RMSLimit
Conduc tion Period
100
181RKI Series
TJ = 125°C
50
0.6
K/ W
0.8
K/ W
1 K/
W
1.5 K
/W
2 K/ W
0
0
50
100
150
200
250
Average On-state Current (A)
0
300
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94382
Revision: 11-Aug-08
180RKI...PbF /181RKI...PbF Series
4000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3500
3000
2500
2000
181RKI Series
1500
1
10
Vishay High Power Products
4000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Phase Control Thyristors
(Stud Version), 180 A
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
3500
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
3000
2500
2000
181RKI Series
1500
0.01
100
0.1
1
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
TJ = 25°C
1000
TJ = 125°C
181RKI Series
100
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.15 K/ W
(DC Operation)
0.1
0.01
181RKI Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal impedance ZthJC Characteristics
Document Number: 94382
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
5
180RKI...PbF /181RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 180 A
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt: 20V, 30ohms;
tr<=0.5 µs, tp=>6µs
b) Recommended load line for
10
<=30% rated di/ dt: 15V, 40ohms (b)
tr<=1 µs, tp=>6µs
(a)
VGD
IGD
0.1
0.001
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
Tj=-40 °C
Tj=140 °C
1
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1)
0.1
(4)
Frequency Limited by PG(AV)
Devic e: 181RKI Series
0.01
(2) (3)
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
18
1
RKI
100
PbF
1
2
3
4
5
1
-
2
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3
-
Thyristor
4
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95077
For technical questions, contact: [email protected]
Document Number: 94382
Revision: 11-Aug-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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